1N50ZG-T92-K [UTC]
1.3A, 500V N-CHANNEL POWER MOSFET; 1.3A ， 500V N沟道功率MOSFET
| 型号： | 1N50ZG-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | 1.3A, 500V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N50Z
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N50Z is an N-channel mode power MOSFET using
1
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 1N50Z is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
TO-92
FEATURES
* RDS(ON)=4.6Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
3
S
S
S
1N50ZL-T92-B
1N50ZL-T92-K
1N50ZL-T92-R
1N50ZG-T92-B
1N50ZG-T92-K
1N50ZG-T92-R
TO-92
TO-92
TO-92
G
G
G
Tape Box
Bulk
Tape Reel
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
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1N50Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
500
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Continuous (TC=25°C)
Pulsed (Note 3)
1.3 (Note 2)
5 (Note 2)
1.3
A
Drain Current
IDM
A
Avalanche Current (Note 3)
IAR
A
Single Pulsed (Note 4)
Repetitive (Note 5)
EAS
113
mJ
mJ
W
Avalanche Energy
EAR
2.6
Power Dissipation
40
PD
Derate above 25°C
Junction Temperature
Storage Temperature
0.32
W/°C
°C
°C
TJ
+150
TSTG
-55~+150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 120mH, IAS = 1.3A, VDD = 50V, RG = 27ꢀ, Starting TJ = 25°C
5. ISD ≤ 1.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
3.13
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
GS=+20V, VDS=0V
500
V
1
µA
µA
µA
Forward
Reverse
V
+5
-5
Gate- Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=0.65A
2.0
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
4.6 6.0
ꢀ
CISS
COSS
CRSS
220 290 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
30
11
35
13
pF
pF
Reverse Transfer Capacitance
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1N50Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
QG
11
1.6
5.5
12
13
42
15
16
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=1.5A
(Note 1, 2)
QGS
QGD
tD(ON)
tR
35
35
90
40
VDD=250V, ID=1.5A, RG=25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
1.3
5
A
A
IS=1.3A, VGS=0V
1.15
V
162
ns
µC
IS=1.5A, VGS=0V,
dIF/dt=100A/µs (Note 1)
QRR
0.54
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
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1N50Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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1N50Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N50Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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