1N60-TM3-T [UTC]
1.2 Amps, 600 Volts N-CHANNEL MOSFET; 1.2安培， 600伏特N沟道MOSFET
| 型号： | 1N60-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 1.2 Amps, 600 Volts N-CHANNEL MOSFET |
| 文件： | 总8页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N60
Power MOSFET
1.2 Amps, 600 Volts
N-CHANNEL MOSFET
1
TO- 251
TO-252
1
ꢀ
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
TO-220
ꢀ
FEATURES
1
TO-220F
* RDS(ON) =9.3Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
*Pb-free plating product number: 1N60L
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
D
D
D
3
S
S
S
S
S
1N60-TA3-T
1N60-TF3-T
1N60-TM3-T
1N60-TN3-R
1N60-TN3-T
1N60L-TA3-T
1N60L-TF3-T
1N60L-TM3-T
1N60L-TN3-R
1N60L-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
Tube
Tube
G
G
G
G
G
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
1N60L-TA3-T
(1)Packing Type
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(3) L: Lead Free Plating, Blank: Pb/Sn
(2)Package Type
(3)Lead Plating
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QW-R502-052,D
1N60
Power MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
600
±30
V
V
A
VGSS
Avalanche Current (Note 2)
IAR
1.2
TC = 25℃
1.2
Continuous Drain Current
ID
A
TC = 100℃
0.76
4.8
Drain Current-Pulsed (Note 2)
Avalanche Energy
IDP
EAR
EAS
A
mJ
mJ
V/ns
W
Repetitive(Note 2)
4.0
Single Pulse(Note 3)
50
Peak Diode Recovery dv/dt (Note 4)
Total Power Dissipation
dv/dt
4.5
TC=25℃
40
PD
Derate above 25°C
0.32
+150
-55 ~ +150
W/℃
℃
Junction Temperature
Storage Temperature
TJ
TSTG
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
3. L=64mH, IAS=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C
4. ISD≤1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ =25°C
ꢀ
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-251
TO-252
TO-220
TO-251
TO-252
TO-220
112
112
54
12
12
4
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
θJA
℃/W
θJc
ꢀ
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250Μa
600
V
VDS = 600V, VGS = 0V
IDSS
10
Μa
Μa
Na
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
DS = 480V, TC = 125℃
100
100
-100
Forward
Reverse
VGS = 30V, VDS = 0V
GS = -30V, VDS = 0V
IGSS
V
Breakdown Voltage Temperature
Coefficient
△BVDSS
△TJ
/
ID = 250Μa
0.4
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250Μa
2.0
4.0
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
RDS(ON) VGS = 10V, ID = 0.6A
9.3
0.9
11.5
gFS
VDS = 50V, ID = 0.6A (Note 1)
CISS
COSS
CRSS
120
20
150
25
Pf
Pf
Pf
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
3.0
4.0
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1N60
Power MOSFET
ꢀ
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Switching Characteristics
Turn-On Delay Time
tD (ON)
tR
tD (OFF)
tF
5
20
60
25
60
6.0
ns
ns
Rise Time
VDD=300V, ID=1.2A, RG=50Ω
(Note 1,2)
25
7
Turn-Off Delay Time
ns
Fall Time
25
5.0
1.0
2.6
ns
Total Gate Charge
QG
nC
nC
nC
VDS=480V, VGS=10V, ID=1.2A
Gate-Source Charge
QGS
QGD
(Note 1,2)
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
ISD
VGS=0V, ISD = 1.2A,
1.4
1.2
4.8
V
A
ISM
A
tRR
VGS=0V, ISD = 1.2A
160
0.3
ns
µC
di/dt = 100A/µs (Note1)
QRR
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
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1N60
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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1N60
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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1N60
Power MOSFET
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS
Output Characteristics
Transfer Characteristics
V
GS
VDS=50V
Top: 15.0V
10 .0V
8 .0V
250μs Pulse Test
100
10-1
10-2
7 .0V
6 .5V
6 .0V
Bottorm :5.5V
100
125℃
25℃
-40℃
250μs Pulse Test
TC=25℃
10-1
101
10-1
100
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
Source- Drain Diode Forward Voltage
On-Resistance vs. Drain Current
30
25
TJ=25℃
VGS=0V
250μs Pulse Test
VGS=10V
VGS=20V
20
15
100
10
5
125℃
25℃
10-1
0.2 0.4
0
0.0
1.0
1.5
2.0
2.5
0.5
0.6 0.8 1.0
1.2 1.4 1.6
Drain Current, ID (A)
Source-Drain Voltage, VSD (V)
Gate Charge vs. Gate-Source Voltage
Capacitance vs. Drain-Source Voltage
200
12
10
Ciss=CGS+CGD
(CDS=shorted)
VDS=120V
VDS=300V
VDS=480V
C
iss
C
oss=CDS+CGD
150
Crss=CGD
8
6
4
Coss
100
50
Crss
2
VGS=0V
f = 1MHz
10-1
ID=1.2A
0
0
100
101
0
4
5
2
1
3
VDS, Drain-SourceVoltage (V)
Total Gate Charge, QG (nC)
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1N60
Power MOSFET
ꢀ
TYPICAL PERFORMANCE CHARACTERISTICS(cont.)
On-Resistance vs. Temperature
Breakdown Voltage vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
VGS=10V
ID=0.6A
VGS=0V
ID=250μA
1.0
0.9
0.8
0.5
0.0
200
-100 -50
0
50
100 150
200
-100 -50
0
50
100 150
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Max. Drain Current vs. Case Temperature
Max. Safe Operating Area
1.2
0.9
Operation in This Area
is Limited by RDS(on)
101
100μs
1ms
10ms
DC
100
0.6
0.3
0.0
10-1
10-2
Tc=25℃
TJ=150℃
Single Pulse
100
101
102
103
25
50
75
100
125
150
Drain-Source Voltage, VDS (V)
Case Temperature, TC (℃)
Thermal Response
D=0.5
100
θJC (t) = 3.13℃/W Max.
Duty Factor, D=t1/t2
TJM -TC=PDM×θJC (t)
0.2
0.1
5
0
.
0
2
0
.
0
1
10-1
PDM
0
.
0
t1
t2
100
Single pulse
10-4 10-3
10-5
101
10-2
10-1
Square Wave Pulse Duration, t1 (sec)
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1N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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