1N60ZL-T92-R [UTC]
1.2A, 600V N-CHANNEL POWER MOSFET; 1.2A ， 600V N沟道功率MOSFET
| 型号： | 1N60ZL-T92-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 1.2A, 600V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N60Z
Power MOSFET
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60Z is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =11.5Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
1N60ZL-T92-B
Halogen Free
1
2
3
S
S
S
S
S
1N60ZG-T92-B
1N60ZG-T92-K
1N60ZG-T92-R
1N60ZG-TN3-R
1N60ZG-TN3-T
D: Drain S: Source
TO-92
TO-92
TO-92
TO-252
TO-252
Tape Box
Bulk
G
G
G
G
G
D
D
D
D
D
1N60ZL-T92-K
1N60ZL-T92-R
Tape Reel
Tape Reel
Tube
1N60ZL-TN3-R
1N60ZL-TN3-T
Note: Pin Assignment: G: Gate
1N60ZL-T92-B
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) T92: TO-92, TN3: TO-252
(1)Packing Type
(2)Package Type
(3)Lead Free
(3) G: Halogen Free, L: Lead Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-724.C
1N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
600
±20
Gate-Source Voltage
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
1.2
A
ID
1.2
A
IDM
4.8
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
50
mJ
mJ
V/ns
Avalanche Energy
EAR
4.0
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-92
1
Power Dissipation (TA=25℃)
PD
W
TO-252
1.5
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
℃
℃
TOPR
TSTG
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
140
UNIT
TO-92
Junction to Ambient
θJA
℃/W
TO-252
100
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
600
V
μA
VDS=600V, VGS=0V
10
+5
-5
Forward
Reverse
VGS=20V, VDS=0V
μA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
μA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
0.4
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
V
VGS=10V, ID=0.6A
9.3 11.5
Ω
CISS
COSS
CRSS
120 150
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
20
25
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
3.0
4.0
tD(ON)
tR
tD(OFF)
tF
5
20
60
25
60
6.0
ns
ns
Turn-On Rise Time
25
7
VDD=300V, ID=1.2A, RG=50Ω
(Note 2,3)
Turn-Off Delay Time
ns
Turn-Off Fall Time
25
5.0
1.0
2.6
ns
Total Gate Charge
QG
nC
nC
nC
VDS=480V, VGS=10V,
Gate-Source Charge
QGS
QGD
ID=1.2A (Note 2,3)
Gate-Drain Charge
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1N60Z
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
MIN TYP MAX UNIT
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS =1.2A
1.4
1.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Reverse Recovery Time
trr
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note 1)
160
0.3
ns
Reverse Recovery Charge
QRR
μC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
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1N60Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N60Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VGS
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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1N60Z
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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