1N65L-TM3-T [UTC]
1.2A, 650V N-CHANNEL POWER MOSFET; 1.2A ， 650V N沟道功率MOSFET
| 型号： | 1N65L-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 1.2A, 650V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
1N65
Power MOSFET
1.2A, 650V N-CHANNEL
POWER MOSFET
1
1
SOT-223
TO-92
DESCRIPTION
The UTC 1N65 is a high voltage power MOSFET and is designed
to have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in the high speed
switching applications of power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
1
1
TO-220
TO-251
TO-220F
FEATURES
1
1
1
* RDS(ON) =12.5Ω@VGS = 10V.
TO-252
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
TO-126
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
S
S
S
S
S
S
1N65L-AA3-R
1N65L-T92-B
1N65L-T92-K
1N65L-T92- R
1N65L-TA3-T
1N65L-TF3-T
1N65L-TM3-T
1N65L-TN3-R
1N65L-TN3-T
1N65L-T60-K
1N65G-AA3-R
1N65G-T92-B
1N65G-T92-K
1N65G-T92- R
1N65G-TA3-T
1N65G-TF3-T
1N65G-TM3-T
1N65G-TN3-R
1N65G-TN3-T
1N65G-T60-K
SOT-223
TO-92
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
Tape Reel
Tape Box
Bulk
TO-92
TO-92
Tape Reel
Tube
TO-220
TO-220F
TO-251
TO-252
TO-252
TO-126
Tube
Tube
Tape Reel
Tube
Bulk
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-579.B
1N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
UNIT
V
Drain-Source Voltage
650
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
1.2
A
ID
1.2
A
IDM
4.8
A
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
SOT-223
EAS
50
mJ
mJ
V/ns
W
Avalanche Energy
EAR
4.0
dv/dt
4.5
1
TO-251/ TO-252
TO-220
28
40
W
W
Power Dissipation
PD
TO-220F
21
W
TO-92(TA=25℃)
1
W
W
℃
℃
TO-126
12.5
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
TOPR
TSTG
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
150
UNIT
SOT-223
TO-251/ TO-252
110
TO-220/ TO-220F
Junction to Ambient
θJA
62.5
140
℃/W
TO-92
TO-126
132
SOT-223
TO-251/ TO-252
TO-220
14
4.53
3.13
5.95
10
Junction to Case
θJc
℃/W
TO-220F
TO-126
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1N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250μA
650
V
10 μA
100 nA
-100 nA
V/℃
VDS=650V, VGS=0V
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
Forward
Reverse
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
2.0
4.0
9.5 12.5
V
VGS=10V, ID=0.6A
Ω
CISS
COSS
CRSS
120 150 pF
20 25 pF
3.0 4.0 pF
VDS=25V, VGS=0V,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
5
25
7
20
60
25
60
ns
ns
ns
ns
Turn-On Rise Time
VDD=325V, ID=1.2A,
RG=50Ω (Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
25
Total Gate Charge
QG
5.0 6.0 nC
VDS=520V, VGS=10V,
ID=1.2A (Note 2,3)
Gate-Source Charge
QGS
QGD
1.0
2.6
nC
nC
Gate-Drain Charge
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS=0V, IS =1.2A
1.4
1.2
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
4.8
A
Reverse Recovery Time
trr
160
0.3
ns
VGS=0V, IS=1.2A
dIF/dt=100A/μs (Note 1)
Reverse Recovery Charge
QRR
μC
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
3. Essentially Independent of Operating Temperature
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1N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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1N65
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circui
Unclamped Inductive Switching Waveformst
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1N65
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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