20NM60L-TA3-T [UTC]
20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET;
| 型号： | 20NM60L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET |
| 文件： | 总6页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
20NM60
Preliminary
Power MOSFET
20A, 600V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 20NM60 is a Super Junction MOSFET Structure and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.3Ω @ VGS=10V, ID=10A
* By using Super Junction Structure
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
D
D
D
D
3
S
S
S
S
20NM60L-TA3-T
20NM60L-TF1-T
20NM60L-TM3-T
20NM60L-TN3-R
20NM60G-TA3-T
20NM60G-TF1-T
20NM60G-TM3-T
20NM60G-TN3-R
TO-220
TO-220F1
TO-251
G
G
G
G
Tube
Tube
Tube
Tape Reel
TO-252
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING
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20NM60
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
600
±30
V
Continuous Drain Current
Pulsed Drain Current
Continuous
20
A
Pulsed (Note 2)
IDM
80
A
Avalanche Current (Note 3)
Avalanche energy
IAR
3.4
A
Single Pulsed (Note 3)
EAS
572
mJ
V/nS
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
6.4
TO-220
240
Power Dissipation
PD
TO-220F1
TO-251/TO-252
58
W
183
W
Junction Temperature
TJ
+150
-55 ~ +150
°C
°C
Storage Temperature Range
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=99mH, IAS=3.4A, VDD=50V, RG=25ꢀ, Starting TJ = 25°C.
4. ISD ≤20A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
TO-220/TO-220F1
TO-251/TO-252
TO-220
Junction to Ambient
Junction to Case
θJA
110
0.52
θJC
TO-220F1
2.16
TO-251/TO-252
0.68
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20NM60
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VDS=0V ,VGS=+30V
VDS=0V ,VGS=-30V
600
2.5
V
10
µA
Forward
Reverse
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS= VGS, ID=250µA
VGS=10V, ID=10A
4.5
0.3
V
Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
1075
804
54
pF
pF
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-on Delay Time (Note 1)
Rise Time
QG
QGS
QGD
tD(ON)
tR
112
8
nC
nC
nC
ns
ns
ns
ns
VDS=50V, VGS=10V, ID=1.3A ,
IG=100µA (Note 1, 2)
33
76
VDD=30V, VGS=10V, ID=0.5A,
RG=25ꢀ (Note 1, 2)
164
305
200
Turn-off Delay Time
tD(OFF)
tF
Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage (Note 1)
Maximum Body-Diode Continuous Current
Reverse Recovery Time (Note 1)
IS
ISM
VSD
trr
20
80
A
A
IS =20A, VGS=0V
IS =20A, VGS=0V,
dIF/dt=100A/µs
1.4
V
435
ns
µC
Reverse Recovery Charge
Qrr
7.42
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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20NM60
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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20NM60
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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20NM60
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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