25N10G-TN3-R [UTC]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | 25N10G-TN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
25N10
Preliminary
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
The UTC 25N10 is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.
FEATURES
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-252
Packing
Lead Free Plating
25N10L-TN3-R
Halogen Free
25N10G-TN3-R
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Tape Reel
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25N10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
100
UNIT
V
Drain Source Voltage
Gate Source Voltage
±20
V
TC =25°C
23
A
Continuous Drain Current (VGS=10V)
TC = 100°C
ID
14.6
A
Pulsed Drain Current (Note 2)
IDM
80
A
Total Power Dissipation (TC =25°C)
PD
41
W
°C
°C
Operating Junction Temperature
Storage Temperature
TJ
-55 ~ +150
-55 ~ +150
TSTG
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
100
3
θJC
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS =0V, ID =1mA
100
V
ΔBVDSS/ΔTJ Reference to 25°C , ID =1mA
0.14
V/°C
VDS =100V, VGS =0V, TJ=25°C
IDSS
25
µA
µA
Drain-Source Leakage Current
VDS =80V, VGS =0V,TJ =150°C
100
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
IGSS
VGS =±20V
±100 nA
VGS(TH)
RDS(ON)
gFS
VDS =VGS, ID =250µA
VGS =10V, ID =16A
VDS =10V, ID =16A
2
4
V
mΩ
S
80
14
CISS
COSS
CRSS
RG
1060 1700 pF
VDS =25V, VGS=0V, f=1.0MHz
f=1.0MHz
Output Capacitance
270
8
pF
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
1.5
2.3
30
SWITCHING PARAMETERS
Total Gate Charge (Note)
Gate Source Charge
QG
QGS
QGD
tD(ON)
tR
19
5
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=80V, ID=16A
Gate Drain Charge
Turn-ON Delay Time1
6
10
28
17
2
Turn-ON Rise Time
VDD=50V, ID=16A, RG=3.3Ω,
VGS=10V, RD=3.125Ω
Turn-OFF Delay Time
tD(OFF)
tF
Turn-OFF Fall-Time
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
Reverse Recovery Time
VSD
tRR
IS =16A, VGS =0V
IS =16A,VGS
dI/dt=100A/µs
1.3
V
=0V,
90
ns
nC
Reverse Recovery Charge
QRR
380
Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
UNISONIC TECHNOLOGIES CO., LTD
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25N10
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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