2N3772L-T30-Y [UTC]
SILICON NPN TRANSISTORS; 硅NPN晶体管
| 型号： | 2N3772L-T30-Y |
| 厂家： | 
Unisonic Technologies |
| 描述： | SILICON NPN TRANSISTORS |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N3772
SILICON NPN TRANSISTOR
SILICON NPN TRANSISTORS
DESCRIPTION
The UTC 2N3772 is a silicon power transistor in TO-3 metal
case. It is designed for linear amplifiers, series pass regulators,
and inductive switching applications.
1
TO-3
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
TO-3
Lead Free
Halogen Free
2N3772G-T30-Y
1
2
3
2N3772L-T30-Y
B
E
C
Tray
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., LTD
1 of 3
QW-R205-002,Ba
2N3772
SILICON NPN TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
VCEV
IC
RATINGS
UNIT
V
Collector-Base Voltage
100
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
7
V
Collector-Emitter Voltage
Collector Current
80
V
30
A
Collector Peak Current (Note 1)
Base Current
ICM
30
A
IB
5
15
A
Base Peak Current (Note 1)
Power Dissipation (TA=25℃)
Junction Temperature
IBM
A
PD
150
W
℃
℃
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note 1. Pulse Test: PW<=300μs, Duty Cycle<=2%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
VCEX(SUS) IC=0.2A,VBE(OFF)=1.5V,RBE=100Ω
VCER(SUS) IC=0.2A, RBE=100Ω
VCEO(SUS) IC=0.2A, IB=0
80
70
60
V
V
V
ICEO
VCE=50V,IB=0
CE=100V, VBE(OFF)=1.5V.
VCE=30V, VBE(OFF)=1.5V, TA=150℃
VCE=50V, IE=0
10
5
mA
V
Collector Cut-off Current
ICEX
mA
10
5
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS
ICBO
IEBO
mA
mA
VBE=7V, IC=0
5
IC=10A,VCE=4V
IC=20A, VCE=4V
IC=10A, IB=1.5A
IC=20A, IB=4A
15
5
60
DC Current Gain (Note)
hFE
1.4
4.0
2.2
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter On Voltage
VBE(ON) IC=10A, VCE=4V
SECOND BREAKDOWN
Second Breakdown Collector with Base
Forward Biased
IS/b
VCE=60V, T=1.0s, Non-repetitive
2.5
A
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
Small-Signal Current Gain
fT
IC=1A, VCE=4V, f=50kHz
IC=1A, VCE=4V, f=1kHz
0.2
40
MHz
hFE
Note: Pulse Test: PW<=300μs, Duty Cycle<=2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R205-002,Ba
www.unisonic.com.tw
2N3772
SILICON NPN TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R205-002,Ba
www.unisonic.com.tw
相关型号：
2N3772LEADFREE
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
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