2N3773 [UTC]
COMPLEMENTARY SILICON TRANSISTORS; 互补硅晶体管型号: | 2N3773 |
厂家: | Unisonic Technologies |
描述: | COMPLEMENTARY SILICON TRANSISTORS |
文件: | 总3页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N3773/2N6099
POWER TRANSISTOR
COMPLEMENTARY SILICON
TRANSISTORS
DESCRIPTION
The UTC 2N3773/2N6099 are complement silicon power
transistors designed for high power audio, disk head positions
and other linear applications. These device can be used in power
switching circuits such as relay or solenoid drivers, DC to DC
converters or inverts.
1
TO-3
FEATURES
* Complement Characterized for linear operation
* High DC Current Gain and low saturation voltage
hFE>15(8A, 4V)
VCE(SAT)<1.4V(IC=8A, IB=0.8A)
* For Low Distortion Complementary Designs
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
2
E
E
3
C
C
2N3773L-T30-Y
2N6099L-T30-Y
2N3773G-T30-Y
2N6099G-T30-Y
TO-3
TO-3
Tray
Tray
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., LTD
1 of 3
QW-R205-001,Ba
2N3773/2N6099
POWER TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
160
140
7
VCEO
V
VEBO
V
Collector-Emitter Voltage
VCEX
160
150
0.855
16
V
TC=25℃
W
W/℃
A
Power Dissipation
Collector Current
Base Current
PC
IC
Dertate Above 25℃
Continuous
Peak
30
A
Continuous
Peak
4
A
IB
15
A
Junction Temperature
Storage Temperature
TJ
150
-55 ~ +150
℃
℃
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: PW<=5ms, Duty Cycle<=10%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
1.17
UNIT
Junction to Case
θJC
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
BVCBO
BVCEX
BVCER
ICBO
IC=0.2A, IB=0
160
160
150
V
IC=0.1A,VBE(OFF)=1.5V, RBE=100Ω
IC=0.1A, RBE=100Ω
VCB=140V, IE=0
V
V
2
5
mA
mA
mA
mA
Emitter Cut-off Current
IEBO
VBE=7V, IC=0
VCE=140V,VBE(OFF)=1.5V
2
Collector Cut-off Current
ON CHARACTERISTICS
DC Current Gain (Note)
ICEX
VCE=140V,VBE(OFF)=1.5V,TC=150℃
10
hFE1
hFE2
VCE=4V, IC=8A
VCE=4V, IC=16A
IC=8A, IB=800mA
IC=16A, IB=3.2A
IC=8A, VCE=4V
15
5
60
1.4
4
V
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
VBE(ON)
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
2.2
hFE
IC=1A, VCE=4V, f=1kHz
IC=1A, f=50kHz
40
4
Magnitade Of Commom-Emitter
Small Signal, Short Circuit Forward
Current Transfer Ratio
|hFE|
Second Breakdown Collector With
Base Forward Biased
IS/b
t=1s(non-repetive), VCE=100V
1.5
A
Note: Pulse Test: PW<=300μs, Duty Cycle<=2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R205-001,Ba
www.unisonic.com.tw
2N3773/2N6099
POWER TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R205-001,Ba
www.unisonic.com.tw
相关型号:
2N3775E3
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MICROSEMI
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