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2N4403_07 [UTC]

PNP GENERAL PURPOSE AMPLIFIER; PNP通用放大器
2N4403_07
型号： 2N4403_07
厂家： Unisonic Technologies    Unisonic Technologies
描述：

PNP GENERAL PURPOSE AMPLIFIER
PNP通用放大器

放大器
文件： 总5页 (文件大小：170K)
中文：  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2N4403  
PNP SILICON TRANSISTOR  
PNP GENERAL PURPOSE  
AMPLIFIER  
„
DESCRIPTION  
The UTC 2N4403 is designed for use as a general purpose  
amplifier and switch requiring collector currents up to 500mA.  
*Pb-free plating product number: 2N4403L  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
E
E
2
B
B
3
C
C
2N4403-T92-B  
2N4403-T92-K  
2N4403L-T92-B  
2N4403L-T92-K  
TO-92  
TO-92  
Tape Box  
Bulk  
發
行
Ｆ Ｏ Ｒ Ｉ Ｓ Ｓ Ｕ Ｅ  
JUL 17.2007  
文 件 管 理 中 心  
UTC  
Doc.Control  
Center  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 5  
QW-R201-053.D  
2N4403  
PNP SILICON TRANSISTOR  
„
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
-40  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
V
-5  
V
Collector Current-Continuous  
-600  
mA  
mW  
mW/℃  
℃
Total Device Dissipation  
625  
PC  
Derate above 25℃  
5.0  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty  
cycle operations.  
„
THERMAL DATA (Ta=25℃, unless otherwise specified)  
CHARACTERISTIC SYMBOL  
RATINGS  
200  
UNIT  
℃/W  
℃/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
θJA  
θJC  
83.3  
„
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown  
Voltage (Note)  
BVCEO IC=-1mA, IB=0  
-40  
V
Collector-Base Breakdown Voltage BVCBO Ic=-0.1mA, IE=0  
-40  
-5  
V
V
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Base Cut-off Current  
BVEBO IE=-0.1mA, IC=0  
ICEX VCE=-35V, VEB=-0.4V  
IBEX  
-0.1  
-0.1  
µA  
µA  
VCE=-35V, VBE=-0.4V  
ON CHARACTERISTICS*  
hFE1  
hFE2  
hFE3  
hFE4  
hFE5  
VCE=-1V,IC=-0.1mA  
30  
60  
VCE=-1V,IC=-1mA  
DC Current Gain  
VCE=-1V,IC=-10mA  
100  
100  
20  
VCE=-2V, IC=-150mA (Note)  
VCE=-2V, IC=-500mA (Note)  
300  
VCE(SAT1) IC=-150mA, IB=-15mA  
CE(SAT2) IC=-500mA, IB=-50mA  
VBE(SAT1) IC=-150mA, IB=-15mA(Note)  
BE(SAT2) IC=-500mA, IB=-50mA  
-0.4  
-0.75  
-0.95  
-1.3  
V
V
V
V
Collector-Emitter Saturation  
Voltage  
V
-0.75  
200  
Base-Emitter Saturation Voltage  
V
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
Collector-Base Capacitance  
Emitter-Base Capacitance  
Input Impedance  
fT  
VCE=-10V, IC=-20mA, f=100MHz  
MHz  
pF  
Ccb  
Ceb  
hIE  
VCB=-10V, IE=0, f=140kHz  
VBE=-0.5V, IC=0, f=140kHz  
VCE=-10V, IC=-1mA, f=1kHz  
VCE=-10V, IC=-1mA, f=1kHz  
VCE=-10V, IC=-1mA, f=1kHz  
VCE=-10V, IC=-1mA, f=1kHz  
8.5  
30  
15  
pF  
1.5  
0.1  
60  
kΩ  
×10-4  
Voltage Feedback Ratio  
Small-Signal Current Gain  
Output Admittance  
hRE  
hFE  
hOE  
8
發
行
500  
Ｆ Ｏ Ｒ Ｉ Ｓ Ｓ Ｕ Ｅ  
JUL 17.2007 100  
1.0  
µmbos  
SWITCHING CHARACTERISTICS  
Delay Time  
tD  
tR  
tS  
tF  
15  
ns  
ns  
ns  
ns  
文 件 管 理 中 心  
Doc.Control  
V
CC=-30V, IC=-150mA IB1=-15mA  
UTC  
Rise Time  
20  
Center  
Storage Time  
VCC=-30V, IC=-150mA  
225  
30  
IB1= IB2=-15mA  
Fall Time  
Note: Pulse test: Pulse Width≤300µs, Duty Cycle≤2%  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R201-053.D  
www.unisonic.com.tw  
2N4403  
PNP SILICON TRANSISTOR  
„
TEST CIRCUIT  
-30V  
200  
Ω
1KΩ  
50Ω  
0
-16V  
≤220ns  
Figure 1. Saturated Turn-On Switching Timer  
1.5V -6V  
37Ω  
Note: BVEBO=5V  
1k  
1KΩ  
50Ω  
0
-30V  
≤220ns  
Figure 2. Saturated Turn-Off Switching Timer  
發
行
Ｆ Ｏ Ｒ Ｉ Ｓ Ｓ Ｕ Ｅ  
JUL 17.2007  
文 件 管 理 中 心  
UTC  
Doc.Control  
Center  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R201-053.D  
www.unisonic.com.tw  
2N4403  
PNP SILICON TRANSISTOR  
„
TYPICAL CHARACTERISTICS  
Input and Output  
Capacitance vs. Reverse Bias Voltage  
Collector-Cutoff Current  
vs. Ambient Temperature  
-100  
-10  
20  
16  
VCB=-35V  
12  
8
Cib  
-1  
Cob  
發
行
-0.1  
4
Ｆ Ｏ Ｒ Ｉ Ｓ Ｓ Ｕ Ｅ  
-0.01  
0
-0.1  
JUL 17.2007  
文 件 管 理 中 心  
25  
50  
75  
100 125  
-1  
-10  
-50  
Ambient Temperature, TA (℃)  
Reverse Bias Voltage (V)  
UTC Doc.Control Center  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R201-053.D  
www.unisonic.com.tw  
2N4403  
PNP SILICON TRANSISTOR  
發
行
UTC assumes no responsibility for equipment failures that result from using products at values that  
Ｆ Ｏ Ｒ Ｉ Ｓ Ｓ Ｕ Ｅ  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
JUL 17.2007  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
文 件 管 理 中 心  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
UTC  
Doc.Control  
Center  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R201-053.D  
www.unisonic.com.tw  

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