2N5401L-C-AB3-K [UTC]
HIGH VOLTAGE SWITCHING TRANSISTOR; 高电压开关晶体管
| 型号： | 2N5401L-C-AB3-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE SWITCHING TRANSISTOR |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
TO-92 Plastic-Encapsulated Transistors
TO-92
2N5401 TRANSISTOR (PNP)
FEATURE
Power dissipation
PCM : 0.625 W (Tamb=25℃)
Collector current
ICM : - 0.6
Collector-base voltage
1. EMITTER
2. BASE
A
3. COLLECTOR
1 2 3
V(BR)CBO : -160 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
MIN
-160
-150
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= -100 µA, IE=0
Ic= -1 mA, IB=0
V
V
IE= -10 µA, IC=0
VCB= -120 V, IE=0
VEB= -4 V, IC=0
-0.1
-0.1
µA
µA
Emitter cut-off current
IEBO
hFE(1)
VCE= -5 V, IC=-1 mA
VCE= -5 V, IC= -10 mA
VCE= -5 V, IC=-50 mA
IC= -50 mA, IB= -5 mA
IC= -50 mA, IB= -5 mA
VCE=-5V, IC=-10mA
f =30MHz
80
80
50
DC current gain
hFE(2)
250
hFE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.5
-1
V
V
Transition frequency
100
MHz
fT
CLASSIFICATION OF hFE(2)
Rank
A
B
C
Range
80-160
120-180
150-250
相关型号：
2N5401M1TA
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
ZETEX
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