2N60-TF3-R [UTC]
2 Amps, 600 Volts N-CHANNEL MOSFET; 2安培， 600伏特N沟道MOSFET
| 型号： | 2N60-TF3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2 Amps, 600 Volts N-CHANNEL MOSFET |
| 文件： | 总8页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N60
Power MOSFET
2 Amps, 600 Volts
N-CHANNEL MOSFET
1
TO- 251
TO-252
1
ꢀ
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
TO-220
ꢀ
FEATURES
1
TO-220F
* RDS(ON) = 3.8Ω@VGS = 10V.
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (Crss = typical 5.0 pF)
* Fast switching capability
*Pb-free plating product number: 2N60L
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
ꢀ
SYMBOL
2.Drain
1.Gate
3.Source
ꢀ ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
1
2
D
D
D
D
D
3
S
S
S
S
S
2N60-TA3-T
2N60-TF3-T
2N60-TM3-T
2N60-TN3-R
2N60-TN3-T
2N60L-TA3-T
2N60L-TF3-T
2N60L-TM3-T
2N60L-TN3-R
2N60L-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
G
G
G
G
G
Tube
Tube
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
2N60L-TA3-T
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
(2)Package Type
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
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QW-R502-053,E
2N60
Power MOSFET
ꢀ
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
600
±30
VGSS
V
Avalanche Current (Note 2)
IAR
2.0
A
TC = 25°C
2.0
A
Drain Current Continuous
ID
TC = 100°C
1.26
8.0
A
Drain Current Pulsed (Note 2)
Avalanche Energy
IDP
EAR
EAS
A
Repetitive(Note 2)
4.5
mJ
mJ
V/ns
W
Single Pulse(Note 3)
140
Peak Diode Recovery dv/dt (Note 4)
Total Power Dissipation
dv/dt
4.5
TC = 25°C
45
PD
Derate above 25°C
0.36
+150
-55 ~ +150
W/℃
℃
Junction Temperature
Storage Temperature
TJ
TSTG
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
ꢀ
THERMAL DATA
PARAMETER
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
RATINGS
UNIT
112
112
54
54
12
12
4
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
θJA
℃/W
θJc
4
ꢀ
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
600
V
VDS = 600V, VGS = 0V
IDSS
10
µA
µA
nA
nA
Zero Gate Voltage Drain Current
VDS = 480V, TC = 125°C
100
100
-100
Forward
Reverse
VGS = 30V, VDS = 0V
IGSS
Gate-Body Leakage Current
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
Coefficient
△BVDSS
△TJ
/
ID = 250 µA
0.4
V/℃
On Characteristics
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250µA
RDS(ON) VGS = 10V, ID =1A
2.0
4.0
5
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
3.8
gFS
VDS = 50V, ID = 1A (Note 1)
2.25
CISS
COSS
CRSS
270
40
5
350
50
7
pF
pF
pF
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
Reverse Transfer Capacitance
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2N60
Power MOSFET
ꢀ
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Switching Characteristics
Turn-On Delay Time
tD (ON)
tR
tD(OFF)
tF
10
25
30
60
50
60
11
ns
ns
Rise Time
VDD =300V, ID =2.4A, RG=25Ω
(Note 1,2)
Turn-Off Delay Time
20
ns
Fall Time
25
ns
Total Gate Charge
QG
9.0
1.6
4.3
nC
nC
nC
VDS=480V, VGS=10V, ID=2.4A
Gate-Source Charge
QGS
QGD
(Note 1, 2)
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
ISD
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
ISM
A
tRR
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/µs (Note1)
180
ns
µC
QRR
0.72
Note: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
2. Essentially Independent of Operating Temperature
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2N60
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
VGS=
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N60
Power MOSFET
ꢀ
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL
VDS
VDS
90%
VDD
VGS
RG
10%
VGS
D.U.T.
10V
tD(ON )
tD(OFF)
Pulse Width ≤ 1μs
Duty Factor ≤0.1%
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Same Type
as D.U.T.
50kΩ
QG
12V
10V
0.3μF
0.2μF
VDS
QGS
QGD
VGS
DUT
VG
3mA
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
VDS
BVDSS
RD
VDD
10V
D.U.T.
tp
IAS
Time
tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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2N60
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS
On-Region Characteristics
Transfer Characteristics
V
GS
VDS=50V
250μs Pulse Test
Top: 15.0V
10 .0V
8 .0V
100
7 .0V
6 .5V
6 .0V
Bottorm :
5.5V
85℃
25℃
100
10-1
-20℃
250μs Pulse Test
TC=25℃
10-1
10-2
2
4
6
8
10
101
10-1
100
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain Current and
Gate Voltage
Body Diode Forward Voltage Variationvs.
Source Current and Temperature
12
10
8
VGS=0V
250μs Pulse Test
TJ
=25℃
VGS=10V
VGS=20V
100
6
4
125℃
25℃
2
0
10-1
0
2
3
4
5
6
1
0.2 0.4
0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Drain Current, ID (A)
Gate Charge vs. Gate ChargeVoltage
VDS=120V
Capacitancevs. Drain-Source Voltage
500
400
300
200
100
0
12
10
C
iss=CGS+CGD
(CDS=shorted)
oss=CDS+CGD
Crss=CGD
C
VDS=300V
VDS=480V
Ciss
Coss
8
6
4
Crss
2
VGS=0V
f = 1MHz
ID=2.4A
0
10-1
100
101
2
0
4
6
8
1
0
Drain-Source Voltage, VDS (V)
Total Gate Charge, QG (nC)
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2N60
Power MOSFET
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage vs. Temperature
On-Resistance vs. Temperature
1.2
1.1
3.0
2.5
2.0
VGS=10V
ID=4.05A
VGS=10V
ID=250μA
1.0
1.5
1.0
0.9
0.8
0.5
0.0
-100 -50
0
50
100 150
200
200
-100 -50
0
50
100 150
Junction Temperature, TJ (℃)
Junction Temperature, TJ (℃)
Max. Safe Operating Area
Max. Drain Current vs. Case Temperature
2.0
Operation in This Area
is Limited by RDS(on)
101
1.5
1.0
100μs 10μs
1ms
10m
s
D
100
C
10-1
10-2
0.5
0.0
TC=25℃
TJ=125℃
Single Pulse
100
101
102
103
150
25
50
75
100
125
Case Temperature, TC (℃)
Drain-Source Voltage, VDS (V)
Thermal Response
D=0.5
100
θJC (t) =2.78℃/W Max.
Duty Factor, D=t1/t2
0.2
0.1
TJM -TC=PDM×θJC (t)
0.05
0.02
0.01
10-1
PDM
t1
t2
100
Square Wave Pulse Duration, t1 (s)
Single pulse
10-5 10-4
10-3
10-2
10-1
101
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2N60
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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