2N6099L-T30-Y [UTC]

COMPLEMENTARY SILICON TRANSISTORS; 互补硅晶体管


型号：	2N6099L-T30-Y
厂家：	Unisonic Technologies
描述：	COMPLEMENTARY SILICON TRANSISTORS 互补硅晶体管晶体晶体管
文件：	总3页 (文件大小：150K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2N3773/2N6099

POWER TRANSISTOR

COMPLEMENTARY SILICON

TRANSISTORS

DESCRIPTION

The UTC 2N3773/2N6099 are complement silicon power

transistors designed for high power audio, disk head positions

and other linear applications. These device can be used in power

switching circuits such as relay or solenoid drivers, DC to DC

converters or inverts.

TO-3

FEATURES

* Complement Characterized for linear operation

* High DC Current Gain and low saturation voltage

h_FE>15(8A, 4V)

V_CE(SAT)<1.4V(I_C=8A, I_B=0.8A)

* For Low Distortion Complementary Designs

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

2N3773L-T30-Y

2N6099L-T30-Y

2N3773G-T30-Y

2N6099G-T30-Y

TO-3

Tray

www.unisonic.com.tw

1 of 3

QW-R205-001,Ba

2N3773/2N6099

POWER TRANSISTOR

ABSOLUTE MAXIMUM RATING (T_A=25℃, unless otherwise specified )

PARAMETER

SYMBOL

V_CBO

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

160

140

V_CEO

V_EBO

Collector-Emitter Voltage

V_CEX

160

150

0.855

T_C=25℃

W/℃

Power Dissipation

Collector Current

Base Current

P_C

I_C

Dertate Above 25℃

Continuous

Peak

Continuous

Peak

I_B

Junction Temperature

Storage Temperature

T_J

150

-55 ~ +150

℃

T_STG

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse Test: P_W<=5ms, Duty Cycle<=10%

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

1.17

UNIT

Junction to Case

θ_JC

℃/W

ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

Collector Cut-off Current

BV_CBO

BV_CEX

BV_CER

I_CBO

I_C=0.2A, I_B=0

160

150

I_C=0.1A,V_BE(OFF)=1.5V, R_BE=100Ω

I_C=0.1A, R_BE=100Ω

V_CB=140V, I_E=0

Emitter Cut-off Current

I_EBO

V_BE=7V, I_C=0

V_CE=140V,V_BE(OFF)=1.5V

Collector Cut-off Current

ON CHARACTERISTICS

DC Current Gain (Note)

I_CEX

V_CE=140V,V_BE(OFF)=1.5V,T_C=150℃

h_FE1

h_FE2

V_CE=4V, I_C=8A

V_CE=4V, I_C=16A

I_C=8A, I_B=800mA

I_C=16A, I_B=3.2A

I_C=8A, V_CE=4V

1.4

Collector-Emitter Saturation Voltage

V_CE(SAT)

V_BE(ON)

Base-Emitter Saturation Voltage

DYNAMIC CHARACTERISTICS

Small Signal Current Gain

2.2

h_FE

I_C=1A, V_CE=4V, f=1kHz

I_C=1A, f=50kHz

Magnitade Of Commom-Emitter

Small Signal, Short Circuit Forward

Current Transfer Ratio

|h_FE|

Second Breakdown Collector With

Base Forward Biased

I_S/b

t=1s(non-repetive), V_CE=100V

1.5

Note: Pulse Test: P_W<=300μs, Duty Cycle<=2%

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

QW-R205-001,Ba

www.unisonic.com.tw

2N3773/2N6099

POWER TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

3 of 3

QW-R205-001,Ba

www.unisonic.com.tw

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