2N60K-TA [UTC]
N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS;
| 型号： | 2N60K-TA |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS |
| 文件： | 总7页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N60K-MT
Power MOSFET
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N60K-MT is a high voltage power MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC
converters and bridge circuits.
FEATURES
* RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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Copyright © 2015 Unisonic Technologies Co., Ltd
QW-R502-B03.F
2N60K-MT
ORDERING INFORMATION
Power MOSFET
Ordering Number
Pin Assignment
Package
Packing
5
Lead Free
-
Halogen Free
2N60G-AA3-T
1
2
3
S
S
S
S
S
S
S
S
S
S
S
D
S
4
-
-
-
-
-
-
-
-
-
-
-
SOT-223
TO-220
G
G
G
G
G
G
G
G
G
G
G
D
D
D
D
D
D
D
D
D
D
D
-
-
-
-
-
-
-
-
-
-
-
Tape Reel
Tube
2N60KL-TA3-T
2N60KL-TF3-T
2N60KL-TF1-T
2N60KL-TF2-T
2N60KL-TF3T-T
2N60KL-TM3-T
2N60KL-TMS-T
2N60KL-TMS2-T
2N60KL-TMS4-T
2N60KL-TN3-R
2N60KL-TN4-R
2N60KL-TND-R
2N60KG-TA3-T
2N60KG-TF3-T
2N60KG-TF1-T
2N60KG-TF2-T
2N60KG-TF3T-T
2N60KG-TM3-T
2N60KG-TMS-T
2N60KG-TMS2-T
2N60KG-TMS4-T
2N60KG-TN3-R
2N60KG-TN4-R
2N60KG-TND-R
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
Tube
Tube
Tube
Tube
Tube
TO-251S
TO-251S2
TO-251S4
TO-252
Tube
Tube
Tube
Tape Reel
Tape Reel
Tape Reel
TO-252-4
TO-252D
S1 G1
S2 G2
G
D
-
-
Note: Pin Assignment: G: Gate
D: Drain
S: Source
(1) T: Tube, R: Tape Reel
2N60KL-TA3-T
(2) AA3: SOT-223, TA3: TO-220, TF3: TO-220F,
TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3,
TM3: TO-251, TMS: TO-251S, TN3: TO-252,
TND: TO-252D
(1)Packing Type
(2)Package Type
(3)Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252-4
TO-252D
SOT-223
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2N60K-MT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
±30
2.0
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
V
Avalanche Current (Note 2)
A
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
8.0
A
EAS
85
mJ
mJ
V/ns
W
Avalanche Energy
EAR
4.5
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
SOT-223
TO-220
1
54
W
TO-220F/TO-220F1
TO-220F3
21
23
W
W
Power Dissipation
PD
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252-4
TO-252D
44
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°С
°С
°С
TOPR
TSTG
-55 ~ +150
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=42.5mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SOT-223
SYMBOL
RATINGS
150
UNIT
°C/W
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
62.5
°C/W
Junction to Ambient
θJA
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252-4
TO-252D
100
°C/W
SOT-223
14
°C/W
°C/W
TO-220
2.32
TO-220F/TO-220F1
TO-220F3
5.95
5.43
°C/W
°C/W
Junction to Case
θJC
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252-4
TO-252D
2.87
°C/W
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2N60K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
V
VDS = 600V, VGS = 0V
10
μA
Drain-Source Leakage Current
Gate-Source Leakage Current
V
DS = 480V, TC =125°С
VGS = 30V, VDS = 0V
GS = -30V, VDS = 0V
100 μA
100 nA
-100 nA
V/°С
Forward
Reverse
IGSS
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.4
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
3.9 5.0
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID =1A
Ω
CISS
COSS
CRSS
210 290 pF
VDS =25V, VGS =0V,
Output Capacitance
31
43
6
pF
pF
f =1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
4.5
tD (ON)
tR
tD(OFF)
tF
40
30
52
20
11
4.4
1.3
60
45
60
35
13
ns
ns
Turn-On Rise Time
VDD =30V, ID =0.5A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
nC
nC
nC
VDS=50V, VGS=1.0V,
Gate-Source Charge
QGS
QGD
ID=1.3A (Note 1, 2)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
VSD
ISD
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
A
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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2N60K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2N60K-MT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
itching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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2N60K-MT
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
0
50
0
0
200
400
600
800
1000
0
0.5
Gate Threshold Voltage, VTH (V)
1
1.5
2
2.5
3
3.5
4
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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