2N60LL-B-TA3-T [UTC]
2 Amps,600/650 Volts N-CHANNEL MOSFET; 2安培， 600 / 650伏特N沟道MOSFET
| 型号： | 2N60LL-B-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2 Amps,600/650 Volts N-CHANNEL MOSFET |
| 文件： | 总8页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N60L
Power MOSFET
2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60L is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 5Ω@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
*Pb-free plating product number: 2N60LL
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
2
D
D
D
D
D
3
S
S
S
S
S
2N60L-x-TA3-T
2N60L-x-TF3-T
2N60L-x-TM3-T
2N60L-x-TN3-R
2N60L-x-TN3-T
2N60LL-x-TA3-T
2N60LL-x-TF3-T
2N60LL-x-TM3-T
2N60LL-x-TN3-R
2N60LL-x-TN3-T
TO-220
TO-220F
TO-251
TO-252
TO-252
G
G
G
G
G
Tube
Tube
Tube
Tape Reel
Tube
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-182,A
2N60L
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
600
650
±30
2.0
UNIT
V
2N60L-A
2N60L-B
Drain-Source Voltage
Gate-Source Voltage
V
VGSS
IAR
V
Avalanche Current (Note 1)
Drain Current Continuous
Drain Current Pulsed (Note 1)
Avalanche Energy
A
TC = 25°C
2.0
A
ID
TC = 100°C
1.26
8.0
A
IDP
EAS
A
Single Pulsed (Note 2)
Repetitive (Note 1)
140
4.5
mJ
mJ
V/ns
W
W
W
W
℃
EAR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
4.5
TO-220
TO-220F
TO-251
TO-252
32
9
Total Power Dissipation
PD
25
20
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
TOPR
TSTG
-55 ~ +150
-55 ~ +150
℃
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
PACKAGE
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
SYMBOL
RATINGS
UNIT
65
58
43
38
5
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
θJA
℃/W
6
θJc
4
12
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
2N60L-A
2N60L-B
600
650
V
V
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ID = 250 µA, Referenced to
25°C
10
µA
Forward
Reverse
100 nA
-100 nA
IGSS
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
0.4
3.8
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250µA
VGS = 10V, ID =1A
2.0
4.0
5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Ω
CISS
COSS
CRSS
270 350 pF
VDS =25V, VGS =0V, f =1MHz
Output Capacitance
40
5
50
7
pF
pF
Reverse Transfer Capacitance
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2N60L
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
tR
tD(OFF)
tF
10
25
30
60
50
60
11
ns
ns
Turn-On Rise Time
VDD =300V, ID =2.4A, RG=25Ω
(Note 4, 5)
Turn-Off Delay Time
20
ns
Turn-Off Fall Time
25
ns
Total Gate Charge
QG
9.0
1.6
4.3
nC
nC
nC
VDS=480V, VGS=10V, ID=2.4A
Gate-Source Charge
QGS
QGD
(Note 4, 5)
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
ISD
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
ISM
A
tRR
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/µs (Note4)
180
ns
µC
QRR
0.72
Note: 1. Repetitive Rating : Pulse width limited by TJ
2. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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2N60L
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
VGS
(Driver)
Period
D=
P.W.
Period
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N60L
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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2N60L
Power MOSFET
TYPICAL CHARACTERISTICS
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2N60L
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
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2N60L
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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