2N60ZG-TF3-T [UTC]
2A, 600V N-CHANNEL POWER MOSFET; 2A ， 600V N沟道功率MOSFET
| 型号： | 2N60ZG-TF3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2A, 600V N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N60Z
Power MOSFET
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N60Z is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* RDS(ON) = 5Ω@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
3
S
S
S
S
2N60ZL-TF3-T
2N60ZL-TM3-T
2N60ZL-TN3-T
2N60ZL-TN3-R
2N60ZG-TF3-T
2N60ZG-TM3-T
2N60ZG-TN3-T
2N60ZG-TN3-R
TO-220F
TO-251
TO-252
TO-252
G
G
G
G
D
D
D
D
Tube
Tube
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-829.B
2N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
Avalanche Current (Note 2)
2.0
A
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
IDM
8.0
A
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
140
mJ
mJ
V/ns
W
Avalanche Energy
EAR
4.5
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220F
23
Power Dissipation
PD
TO-251/TO-252
44
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220F
SYMBOL
RATINGS
62.5
UNIT
°С/W
°С/W
°С/W
°С/W
Junction to Ambient
Junction to Case
θJA
TO-251/TO-252
TO-220F
100
5.5
θJc
TO-251/TO-252
2.87
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2N60Z
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
600
V
μA
10
5
Forward
Reverse
μA
Gate-Source Leakage Current
IGSS
-5
μA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.4
3.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
5
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID =1A
Ω
CISS
COSS
CRSS
270 350 pF
VDS =25V, VGS =0V,
f =1MHz
Output Capacitance
40
5
50
7
pF
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD (ON)
tR
tD(OFF)
tF
10
25
30
60
50
60
11
ns
ns
Turn-On Rise Time
VDD =300V, ID =2.4A,
RG=25Ω (Note 1, 2)
Turn-Off Delay Time
20
ns
Turn-Off Fall Time
25
ns
Total Gate Charge
QG
9.0
1.6
4.3
nC
nC
nC
VDS=480V, VGS=10V,
ID=2.4A (Note 1, 2)
Gate-Source Charge
QGS
QGD
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
VSD
ISD
ISM
trr
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
A
180
ns
μC
VGS = 0 V, ISD = 2.4A,
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
0.72
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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2N60Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
D=
P.W.
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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2N60Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
Time
tp
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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2N60Z
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
200
400
600
800
1000
0
0.5
Gate Threshold Voltage, VTH (V)
1
1.5
2
2.5
3
3.5
4
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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