2N6718G-A-T92-K [UTC]

Small Signal Bipolar Transistor, 1A I(C), NPN,;
2N6718G-A-T92-K
型号: 2N6718G-A-T92-K
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor, 1A I(C), NPN,

开关 晶体管
文件: 总4页 (文件大小:160K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2N6718  
NPN SILICON TRANSISTOR  
NPN GENERAL PLANAR  
TRANSISTOR  
DESCRIPTION  
The UTC 2N6718 is designed for general purpose medium  
power amplifier and switching applications.  
FEATURES  
* High Power: 850mW  
* High Current: 1A  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free Plating  
2N6718L-x-AB3-R  
2N6718L-x-T6C-K  
2N6718L-x-T92-B  
2N6718L-x-T92-K  
Halogen Free  
1
B
E
E
E
2
3
E
B
B
B
2N6718G-x-AB3-R  
2N6718G-x-T6C-K  
2N6718G-x-T92-B  
2N6718G-x-T92-K  
SOT-89  
TO-126C  
TO-92  
C
C
C
C
Tape Reel  
Bulk  
Tape Box  
Bulk  
TO-92  
www.unisonic.com.tw  
Copyright © 2013 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R201-056.D  
2N6718  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
100  
100  
V
5
V
Collector Current (Continue)  
Collector Current (Pulse)  
1
2
A
IC  
A
SOT-89  
TO-126C  
TO-92  
0.5  
W
Total Power Dissipation  
PD  
1.6  
W
850  
mW  
°C  
°C  
°C  
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
-40 ~ +125  
-55 ~ +150  
TOPR  
TSTG  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER SYMBOL TEST CONDITIONS  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (note)  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector Cut-Off Current  
BVCBO IC=100uA  
BVCEO IC=1mA  
100  
100  
5
V
V
BVEBO IE=10A  
VCE(SAT) IC=350mA, IB=35mA  
V
350 mV  
100 nA  
ICBO  
hFE1  
hFE2  
hFE3  
fT  
VCB=80V  
VCE=1V, IC=50mA  
80  
50  
20  
50  
DC Current Gain  
VCE=1V, IC=250mA  
VCE=1V, IC=500mA  
VCE=10V, IC=50mA, f=100MHz  
VCB=10V, IE=0, f=1MHz  
300  
Current Gain - Bandwidth Product  
Output Capacitance  
MHz  
Cob  
20  
pF  
Note: Pulse test: PulseWidth380s, Duty Cycle2%  
CLASSIFICATION OF hFE2  
RANK  
A
B
RANGE  
50~115  
95~300  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R201-056.D  
www.unisonic.com.tw  
2N6718  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Saturation Voltage  
vs. Collector Current  
Collector Output Capacitance  
100  
10000  
1000  
10  
1
Cob  
VBE(SAT)@Ic=10IB  
100  
100  
1
10  
100  
10  
1000 10000  
0.1  
1
Collector Current, Ic (mA)  
Collector Base Voltage (V)  
Cutoff Frequency  
vs. Collector Current  
Safe Operating Area  
10  
1000  
1ms  
1
fT@VCE=10V  
100ms  
1s  
0.1  
0.01  
100  
100  
1
10  
1
10  
100  
Collector Current, Ic(mA)  
Forward Voltage, VCE(V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R201-056.D  
www.unisonic.com.tw  
2N6718  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Power Derating  
2000  
1500  
1000  
TO-126C  
TO-92  
SOT-89  
500  
0
50  
100  
150  
200  
0
Ambient Temperature, Ta()  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R201-056.D  
www.unisonic.com.tw  

相关型号:

2N6718G-B-AB3-R

Small Signal Bipolar Transistor, 1A I(C), NPN,
UTC

2N6718G-B-T92-B

Small Signal Bipolar Transistor, 1A I(C), NPN,
UTC

2N6718G-B-T92-K

Small Signal Bipolar Transistor, 1A I(C), NPN,
UTC

2N6718G-X-AB3-R

NPN GENERAL PLANAR TRANSISTOR
UTC

2N6718G-X-T6C-K

NPN GENERAL PLANAR TRANSISTOR
UTC

2N6718G-X-T92-B

NPN GENERAL PLANAR TRANSISTOR
UTC

2N6718G-X-T92-K

NPN GENERAL PLANAR TRANSISTOR
UTC

2N6718L

Mini size of Discrete semiconductor elements
ETC

2N6718L-A-AB3-B

NPN GENERAL PLANAR TRANSISTOR
UTC

2N6718L-A-AB3-K

NPN GENERAL PLANAR TRANSISTOR
UTC

2N6718L-A-AB3-R

NPN GENERAL PLANAR TRANSISTOR
UTC

2N6718L-A-T6C-B

NPN GENERAL PLANAR TRANSISTOR
UTC