2N7002ZTL-AN3-R [UTC]
300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET; 300毫安， 60V双N沟道增强型功率MOSFET
| 型号： | 2N7002ZTL-AN3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总3页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N7002ZT
Power MOSFET
300mA, 60V DUAL N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET
DESCRIPTION
The UTC 2N7002ZT uses advanced technology to provide
excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-523
Packing
Lead Free
Halogen Free
2N7002ZTG-AN3-R
1
2
3
2N7002ZTL-AN3-R
S
G
D
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-538.C
2N7002ZT
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
Continuous
300
Drain Current
ID
mA
Pulse(Note 2)
800
Power Dissipation
200
mW
mW/°C
°C
PD
Derating above TA=25°C
Junction Temperature
Storage Temperature
1.6
TJ
+150
-55 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
VGS=0V, ID=10µA
60
V
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
1.0
µA
µA
IGSS
±10
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
1.0
1.85
2.5
13.5
7.5
V
VGS=10V, ID=0.3A, TJ=125°C
Static Drain-Source On-Resistance (Note)
Ω
VGS=5V, ID=0.05A
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
25
10
50
25
pF
pF
pF
Output Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
3.0
5.0
tD(ON)
12
20
20
30
ns
ns
ID=0.2 A, VDD=30V, VGS=10V,
RL=150Ω, RG=10Ω
Turn-OFF Delay Time
tD(OFF)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
VSD
VGS=0V, Is=300mA (Note )
0.88
1.5
0.8
V
A
ISM
Maximum Continuous Drain-Source Diode
Forward Current
Is
300
mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-538.C
www.unisonic.com.tw
2N7002ZT
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Test Circuit
Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R502-538.C
www.unisonic.com.tw
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