2N70LG-TM3-T [UTC]
2 Amps, 700 Volts N-CHANNEL POWER MOSFET;
| 型号： | 2N70LG-TM3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 2 Amps, 700 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N70L
Power MOSFET
2 Amps, 700 Volts N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N70L is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient
DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 6.3Ω@VGS = 10V
* Ultra Low gate charge (typical 8.1nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
TO-251
Packing
Tube
Lead Free
Halogen Free
2N70LG-TM3-T
1
2
3
2N70LL-TM3-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain S: Source
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QW-R502-872.A
2N70L
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
700
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 2)
2.0
A
Continuous
ID
2.0
A
Drain Current
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
IDM
8.0
A
EAS
140
mJ
mJ
V/ns
W
Avalanche Energy
EAR
2.8
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation
dv/dt
PD
4.5
30
Junction Temperature
TJ
+150
-55 ~ +150
-55 ~ +150
°С
°С
°С
Operating Temperature
Storage Temperature
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=45mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
110
UNIT
°С/W
°С/W
Junction to Ambient
Junction to Case
θJc
4.24
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0V, ID = 250μA
700
V
VDS = 700V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
10
μA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ ID = 250 μA, Referenced to 25°C
0.4
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
2.0
4.0
5.0 6.3
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10V, ID =1A
Ω
CISS
COSS
CRSS
270 350 pF
Output Capacitance
VDS =25V, VGS =0V, f =1MHz
38
5
50
7
pF
pF
Reverse Transfer Capacitance
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QW-R502-872.A
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2N70L
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
tD (ON)
tR
tD(OFF)
tF
30
80
50
70
11
ns
ns
V
DD =350V, ID =2.0A, RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
Turn-Off Fall Time
ns
ns
Total Gate Charge
QG
8.1
1.7
4.4
nC
nC
nC
VDS=560V, VGS=10V, ID=2.0A
(Note 1, 2)
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
VSD
ISD
VGS = 0 V, ISD = 2.0 A
1.4
2.0
8.0
V
A
ISM
A
Reverse Recovery Time
tRR
VGS = 0 V, ISD = 2.0A
di/dt = 100 A/μs (Note1)
260
ns
μC
Reverse Recovery Charge
QRR
1.09
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
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2N70L
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
VDS
-
+
-
L
RG
Driver
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
VGS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
P. W.
Period
VGS
(Driver)
Period
P.W.
D=
10V
=
VGS
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
VDD
(D.U.T.)
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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2N70L
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
10%
VGS
tD(ON)
tD(OFF)
tF
tR
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
1
2
BVDSS
E
AS
=
LIAS
2
BVDSS - VDD
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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2N70L
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
150
300
450
600 750
0
0.6
1.2
1.8
2.4 3.0 3.6
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
Drain Current vs. Source to Drain Voltage
2.4
1.2
2.0
1.6
1.2
1.0
0.8
VGS=10V, ID=1A
0.6
0.4
0.8
0.2
0
0.4
0
0
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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