2N80L-TND-R [UTC]
N-CHANNEL POWER MOSFET;
| 型号： | 2N80L-TND-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N80
Preliminary
Power MOSFET
2 Amps, 800 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N80 is an N-channel mode Power FET using UTC’s
advanced technology to provide costumers planar stripe and DMOS
technology. This technology is specialized in allowing a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 2N80 is universally applied in high efficiency switch
mode power supply.
FEATURES
* 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
* High switching speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
2
D
D
3
S
S
Lead Free
2N80L-TF3-T
2N80L-TN3-R
Halogen Free
2N80G-TF3-T
2N80G-TN3-R
TO-220F
TO-252
G
G
Tube
Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2010 Unisonic Technologies Co., Ltd
QW-R502-480.a
2N80
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
IAR
RATINGS
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Avalanche Current (Note 1)
2.4
A
Continuous
ID
2.4
A
Drain Current
Pulsed (Note 1)
IDM
9.6
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
180
mJ
mJ
V/ns
W
Avalanche Energy
EAR
8.5
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
TO-220F
TO-252
24
Power Dissipation
PD
43
W/°C
°C
°C
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
TSTG
Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PACKAGE
TO-220F
TO-252
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
θJA
110
TO-220F
TO-252
5.2
θJC
2.85
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2N80
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNI
T
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
800
0.9
V
△BVDSS/△TJ
Reference to 25°C, ID=250µA
VDS=800V, VGS=0V
V/°C
10
Drain-Source Leakage Current
Gate- Source Leakage Current
IDSS
IGSS
µA
V
DS=640V, TC=125°C
VGS=+30V, VDS=0V
GS=-30V, VDS=0V
100
Forward
Reverse
+100 nA
-100 nA
V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=1.2A
VDS=50V, ID=1.2A
3.0
5.0
4.9 6.3
2.65
V
Ω
S
Static Drain-Source On-State Resistance
Forward Transconductance (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
425 550 pF
45 60 pF
5.5 7.0 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge (Note 4,5)
Gate to Source Charge (Note 4,5)
Gate to Drain Charge (Note 4,5)
Turn-ON Delay Time (Note 4,5)
Rise Time (Note 4,5)
QG
QGS
QGD
tD(ON)
tR
12
2.6
6.0
12
30
25
28
15 nC
nC
VGS=10V, VDS=640V, ID=2.4A
nC
35
70
60
65
ns
ns
ns
ns
VDD=400V, ID=2.4A, RG=25Ω
Turn-OFF Delay Time (Note 4,5)
Fall-Time (Note 4,5)
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.4
A
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
9.6
1.4
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
VSD
tRR
IS=2.4A, VGS=0V
V
480
2.0
ns
µC
IS=2.4A, VGS=0V, dIF/dt=100A/µs
QRR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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2N80
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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2N80
Preliminary
Power MOSFET
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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2N80
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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