2NNPP06 [UTC]
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL);
| 型号： | 2NNPP06 |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) |
| 文件： | 总6页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2NNPP06
Power MOSFET
60V COMPLEMENTARY
ENHANCEMENT MODE
MOSFET H-BRIDGE
(N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UTC 2NNPP06 is a complementary enhancement mode
SOP-8
MOSFET H-BRIDGE, it uses UTC advanced technology to provide
customers low on resistance, low gate charge and low threshold
voltage.
The UTC 2NNPP06 is universally applied in DC-AC Inverters and
DC Motor control.
FEATURES
* N-CHANNEL
- RDS(on) = 0.25Ω @VGS = 10V, ID=1.8A
- RDS(on) = 0.35Ω @VGS =4.5V, ID=1.3A
* P-CHANNEL
- RDS(on) = 0.4Ω @VGS = -10V, ID=-0.9A
- RDS(on) = 0.6Ω @VGS =-4.5V, ID=-0.8A
* High switching speed
* Low gate charge (N:-ch Typ.=3.2nC, P-ch: Typ.=5.1nC)
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Package
Packing
Halogen Free
2NNPP06L-S08-R
2NNPP06L-S08-T
2NNPP06G-S08-R
2NNPP06G-S08-T
SOP-8
SOP-8
Tape Reel
Tube
www.unisonic.com.tw
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-781.B
2NNPP06
Power MOSFET
PIN CONFIGURATION
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2NNPP06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
RATINGS
N-CHANNEL P-CHANNEL
PARAMETER
SYMBOL
UNIT
Gate-Source Voltage
Drain-Source Voltage
VGSS
VDSS
ID
±20
60
±20
-60
V
V
Continuous VGS=10V, TA=25°C, t ≤10 sec
1.8
7.1
-1.42
-6.03
A
Drain Current
Pulsed
VGS=10V, TA=25°C (Note 1)
TA=25°C
IDM
A
0.87
6.94
W
Power Dissipation
PD
Derating
mW/°C
°C
Junction Temperature
TJ
-55~+150
-55~+150
Storage Temperature Range
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
144
UNIT
°C/W
Junction to Ambient (Note 1)
θJA
Notes: 1. Pulse width ≤ 300μs; duty cycle ≤ 2%. The pulse current is limited by the maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
FOR N-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS ID=250µA, VGS=0V
IDSS VDS=60V, VGS=0V
GS=+20V, VDS=0V
VGS=-20V, VDS=0V
60
V
0.5
µA
Forward
Reverse
V
+100 nA
Gate-Source Leakage Current
IGSS
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1
3
V
Ω
Ω
VGS=10V, ID=1.8A
RDS(ON)
0.25
0.35
Static Drain-Source On-State Resistance (Note 1)
VGS=4.5V, ID=1.3A
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
Output Capacitance (Note 3)
Reverse Transfer Capacitance (Note 3)
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
Gate to Source Charge (Note 3)
Gate to Drain Charge (Note 3)
Turn-ON Delay Time (Note 2, 3)
Rise Time (Note 2, 3)
CISS
166
19.5
8.7
pF
pF
pF
V
GS=0V, VDS=25V,
COSS
CRSS
f=1.0MHz
QG
QGS
QGD
tD(ON)
tR
3.2
0.67
0.82
1.8
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=30V,
ID=1.8A
1.4
VDD=30V, ID=1A, RG≈6Ω,
VGS=10V
Turn-OFF Delay Time (Note 2, 3)
Fall-Time (Note 2, 3)
tD(OFF)
tF
4.9
2.0
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
TA=25°C (Note 2)
TA=25°C (Note 3)
IS=0.45A, VGS=0V
1.8
7.1
A
A
V
ISM
VSD
Drain-Source Diode Forward Voltage(Note 1)
0.8 0.95
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2NNPP06
Power MOSFET
ELECTRICAL CHARACTERISTICS(CONT.) (TA=25°C, unless otherwise specified)
FOR P-CHANNEL
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS ID=-250µA, VGS=0V
IDSS VDS=-60V, VGS=0V
GS=+20V, VDS=0V
VGS=-20V, VDS=0V
-60
-1
V
-0.5
µA
Forward
Reverse
V
+100 nA
Gate-Source Leakage Current
IGSS
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
-3
V
Ω
Ω
VGS=-10V, ID=-0.9A
RDS(ON)
0.4
0.6
Static Drain-Source On-State Resistance (Note 1)
VGS=-4.5V, ID=-0.8A
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
Output Capacitance (Note 3)
Reverse Transfer Capacitance (Note 3)
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
Gate to Source Charge (Note 3)
Gate to Drain Charge (Note 3)
Turn-ON Delay Time (Note 2, 3)
Rise Time (Note 2, 3)
CISS
141
13.1
10.8
pF
pF
pF
VGS=0V, VDS=-25V,
COSS
f=1.0MHz
CRSS
QG
5.1
0.7
0.7
1.6
2.3
13
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-30V,
QGS
ID=-0.9A
QGD
tD(ON)
tR
tD(OFF)
tF
VDD=-30V, ID=-1A, RG≈6Ω,
GS=-10V
V
Turn-OFF Delay Time (Note 2, 3)
Fall-Time (Note 2, 3)
5.8
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
TA=25°C (Note 2)
TA=25°C (Note 3)
IS=-0.8A, VGS=0V
-1.42
-6.03
A
A
V
ISM
VSD
Drain-Source Diode Forward Voltage (Note 1)
-0.85 -0.95
Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature
3. For design aid only, not subject to production testing
UNISONIC TECHNOLOGIES CO., LTD
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2NNPP06
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
VDS
QGS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Waveforms
Gate Charge Test Circuit
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2NNPP06
Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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