2SA1020-O-AB3-K [UTC]

SILICON PNP EPITAXIAL TRANSISTOR; PNP硅外延晶体管


型号：	2SA1020-O-AB3-K
厂家：	Unisonic Technologies
描述：	SILICON PNP EPITAXIAL TRANSISTOR PNP硅外延晶体管晶体晶体管
文件：	总4页 (文件大小：199K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2SA1020

PNP SILICON TRANSISTOR

SILICON PNP EPITAXIAL

TRANSISTOR

DESCRIPTION

ꢀ

SOT-89

The UTC 2SA1020 is designed for power amplifier and power

switching applications.

ꢀ

FEATURES

*Low collector saturation voltage:

_CE(SAT)=-0.5V(max.) (I_C=-1A)

TO-92NL

*High speed switching time: t_STG=1.0µs(Typ.)

*Complement to UTC 2SC2655

*Pb-free plating product number:2SA1020L

ꢀ

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

2SA1020L-x-AB3-R

2SA1020L-x-T9N-B

2SA1020L-x-T9N-K

2SA1020-x-AB3-R

2SA1020-x-T9N-B

2SA1020-x-T9N-K

SOT-89

TO-92NL

Tape Reel

Tape Box

Bulk

2SA1020L-x-AB3-R

(1)Packing Type

(2)Package Type

(3)Rank

(1) B: Tape Box, K: Bulk, R: Tape Reel

(2) AB3: SOT-89, T9N: TO-92NL

(3) x: refer to Classification of h

FE1

(4)Lead Plating

(4) L: Lead Free Plating, Blank: Pb/Sn

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2SA1020

PNP SILICON TRANSISTOR

ꢀ

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

-5

-2

TO-92NL

SOT-89

900

°C

Collector Power Dissipation

P_C

500

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ꢀ

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

BV_CEO

I_CBO

TEST CONDITIONS

Ic=-10mA, I_B=0

MIN TYP MAX UNIT

Collector to Emitter Breakdown Voltage

Collector Cut-off Current

-50

V_CB=-50V, I_E=0

V_EB=-5V, I_C=0

-1.0

240

µA

Emitter Cut-off Current

I_EBO

h_FE1

h_FE2

V_CE=-2V, I_C=-0.5A

V_CE=-2V, I_C=-1.5A

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

V_CE(SAT)Ic=-1A, I_B=-0.05A

-0.5

-1.2

V_BE(SAT)

f_T

Ic=-1A, I_B=-0.05A

V_CE=-2V, Ic=-0.5A

V_CB=-10V, I_E=0, f=1MHz

100

MHz

µs

Collector Output Capacitance

Turn-on Time

Cob

t_ON

0.1

1.0

0.1

Storage Time

t_STG

Switching Time

Fall Time

t_F

ꢀ

CLASSIFICATION OF h_FE1

RANK

RANGE

70 - 140

120 - 240

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2SA1020

PNP SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS

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2SA1020

PNP SILICON TRANSISTOR

ꢀ

TYPICAL CHARACTERISTICS(Cont.)

TO-92NL

SOT-89

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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