2SA1201G-Y-AB3-R [UTC]
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3;
| 型号： | 2SA1201G-Y-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3 放大器 晶体管 |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1201
Preliminary
PNP SILICON TRANSISTOR
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and
voltage amplifier applications.
FEATURES
*High voltage: VCEO= -120V
*High transition frequency: fT=120MHz(typ.)
*Pc=1 to 2 W(mounted on ceramic substrate)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
C
C
C
C
3
2SA1201L-x-AB3-R
2SA1201L-x-T92-B
2SA1201L-x-T92-K
2SA1201L-x-T92-R
2SA1201G-x-AB3-R
2SA1201G-x-T92-B
2SA1201G-x-T92-K
2SA1201G-x-T92-R
SOT-89
TO-92
TO-92
TO-92
B
E
E
E
E
B
B
B
Tape Reel
Tape Box
Bulk
Tape Reel
Note: Pin Assignment: B: BASE C: COLLECTOR E: EMITTER
www.unisonic.com.tw
1 of 3
Copyright © 2014 Unisonic Technologies Co., Ltd
QW-R204-024.d
2SA1201
Preliminary
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-120
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-120
V
-5
V
-800
mA
mA
mW
mW
mW
C
Base Current
IB
-160
500
SOT-89
TO-92
Collector Power Dissipation
PC
1000 (Note 2)
600
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Mounted on cermic substrate( 250mm2 × 0.8t )
ELECTRICAL CHARACTERISTICS(TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
V(BR)CEO
V(BR)EBO
ICBO
TEST CONDITIONS
IC= -10mA, IB=0
MIN TYP MAX UNIT
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
-120
-5
V
V
IE= -1mA, IC=0
VCB= -120V, IE=0
-0.1
-0.1
240
-1.0
-1.0
A
A
Emitter Cut-Off Current
IEBO
VEB= -5V, IC=0
DC Current Gain
hFE
VCE= -5V, IC= -100mA
IC= -500mA, IB= -50mA
VCE= -5V, IC= -100mA
VCE= -5V, IC= -100mA
VCB= -10V, IE=0, f=1MHz
80
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
VCE(SAT)
VBE
V
V
Transition Frequency
fT
120
MHz
pF
Collector Output Capacitance
COB
30
CLASSIFICATION OF hFE
RANK
O
Y
120 - 240
RANGE
80 - 160
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R204-024.d
2SA1201
Preliminary
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R204-024.d
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