2SA1627AL-K-AA3-R [UTC]

Small Signal Bipolar Transistor;
2SA1627AL-K-AA3-R
型号: 2SA1627AL-K-AA3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor

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中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2SA1627A  
PNP SILICON TRANSISTOR  
PNP EPITAXIAL SILICON  
TRANSISTOR  
DESCRIPTION  
The UTC 2SA1627A is designed for general purpose  
amplifier and high speed switching applications.  
FEATURES  
* High voltage  
* Low collector saturation voltage.  
* High-speed switching  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
E
E
B
2
C
C
C
C
3
E
B
B
E
2SA1627AL-x-AA3-R  
2SA1627AL-x-T60-K  
2SA1627AL-x-T6C-K  
2SA1627AL-x-TN3-R  
2SA1627AG-x-AA3-R  
2SA1627AG-x-T60-K  
2SA1627AG-x-T6C-K  
2SA1627AG-x-TN3-R  
SOT-223  
TO-126  
Tape Reel  
Bulk  
TO-126C  
TO-252  
Bulk  
Tape Reel  
MARKING INFORMATION  
PACKAGE  
MARKING  
SOT-223  
TO-252  
TO-126  
TO-126C  
www.unisonic.com.tw  
1 of 4  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R217-004.E  
2SA1627A  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
RATINGS  
-600  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
VCEO  
-600  
VEBO  
-7.0  
SOT-223  
0.8  
Collector Power Dissipation  
TO-252  
PC  
1.9  
W
TO-126/TO-126C  
1.0  
Collector Current (DC)  
IC  
ICP  
-1.0  
A
A
Collector Current (Pulse) (Note 2)  
Junction Temperature  
-2.0  
TJ  
150  
C  
C  
Storage Temperature  
TSTG  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. PW10ms, Duty Cycle50%  
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)  
PARAMETER  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB= -600V, IE=0  
MIN TYP MAX UNIT  
Collector Cut-Off Current  
Emitter Cut-Off Current  
-10  
-10  
120  
µA  
µA  
IEBO  
VEB= -7.0V, IC=0  
hFE1  
VCE= -5.0V, IC= -0.1A  
VCE= -5.0V, IC= -0.5A  
30  
4
58  
19  
DC Current Gain (Note 2)  
hFE2  
Collector-Emitter Saturation Voltage(Note)  
Base-Emitter Saturation Voltage(Note)  
Gain Bandwidth Product  
Output Capacitance  
VCE(SAT) IC= -0.3A, IB= -0.06A  
-0.28 -1.5  
-0.85 -1.2  
28  
V
V
VBE(SAT)  
fT  
IC= -0.3A, IB= -0.06A  
VCE= -10V, IE=0.1A  
10  
MHz  
pF  
µs  
COB  
tON  
VCB= -10V, IE=0, f=1.0MHz  
42  
0.1  
3.5  
50  
0.5  
5.0  
Turn-On Time  
IC=-0.5A, RL=500,  
IB1= -IB2= -0.1A, VCC =-250V  
Storage Time  
TSYG  
tF  
µs  
Fall Time  
0.08 0.5  
µs  
Pulsed PW350µs,Duty Cycle2%  
Note:  
CLASSIFICATION OF hFE1  
RANK  
M
L
K
RANGE  
30-60  
40-80  
60-120  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R217-004.E  
www.unisonic.com.tw  
2SA1627A  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector Current vs.  
Collector to Emitter Voltage  
DC Current Gain vs. Collector Current  
-100  
-80  
1000  
300  
IB=1.8mA  
IB=1.6mA  
IB=1.4mA  
IB=1.2mA  
IB=1.0mA  
IB=0.8mA  
IB=0.6mA  
100  
30  
VCE=-5.0V  
-60  
-40  
10  
-20  
0
IB=0.4mA  
IB=0.2mA  
3
1
-0.002 -0.005  
-0.02  
-0.01 -0.05  
Collector Current, IC (A)  
-0.1-0.2 -0.5-1.0-2.0  
0
-2.0  
-4.0  
-6.0  
-8.0  
-10  
Collector to Emitter Voltage, VCE (V)  
Collector and Base Saturation Voltage  
vs. Collector Current  
Collector Current vs.  
Base to Emitter Voltage  
-1.0  
-3.0  
-1.0  
IC=5IB  
VCE=-5.0V  
-0.3  
-0.1  
VBE(SAT)  
-0.3  
-0.1  
-0.03  
-0.01  
VCE(SAT)  
-0.03  
-0.003  
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6  
Base to Emitter Voltage, VBE (V)  
-0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5  
Collector Current, IC (A)  
Output Capacitance vs.  
Collector to Base Voltage  
Collector Power Dissipation  
vs. Ambient Temperature  
1.2  
200  
100  
IE=0  
Free Air  
1.0  
0.8  
50  
0.6  
0.4  
20  
10  
5.0  
0.2  
0
2.0  
-3.0  
-10  
-30  
-100  
-300  
0
25  
50  
75  
100 125 150  
Collector to Base Voltage, VCB (V)  
Ambient Temperature, TA (  
)
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R217-004.E  
www.unisonic.com.tw  
2SA1627A  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
Gain Bandwidth Product vs.  
Collector Current  
Turn Off Time vs. Collector Current  
100  
50  
IC/IB=5  
VCE=-250V  
5.0  
VCB=-5.0V  
IB1=IB2  
tSTG  
2.0  
1.0  
20  
10  
0.5  
5.0  
0.2  
0.1  
2.0  
1.0  
tF  
-0.03  
-0.1  
-0.3  
-1.0  
-3.0  
-0.002 -0.005-0.01-0.02 -0.05 -0.1 -0.2  
Collector Current, IC (A)  
Collector Current, IC (mA)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R217-004.E  
www.unisonic.com.tw  

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