2SA733 [UTC]
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR; 低频放大器PNP外延硅晶体管
| 型号： | 2SA733 |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SA733
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is an low frequency amplifier.
1
FEATURES
*Collector-Emitter voltage:
BVCBO=-50V
*Collector current up to –150mA
*High hFE linearity
TO-92
*Complimentary to 2SC945
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
-60
UNIT
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
Collector Current
-50
V
-5
V
250
mW
mA
°C
Ic
-150
Junction Temperature
Storage Temperature
Tj
125
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
SYMBOL
BVCBO
BVCEO
ICBO
TEST CONDITIONS
Ic=-100mA, IE=0
IC=-10mA,IB=0
MIN TYP MAX UNIT
-60
-50
V
V
VCB=-40V,IE=0
VEB=-3V,Ic=0
-100
-100
600
nA
nA
Emitter Cut-Off Current
IEBO
DC Current Gain(note)
hFE1
VCE=-6V,Ic=-1mA
90
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
fT
Ic=-100mA,IB=-10mA
VCE=-10V,Ic=-50mA
VCB=-10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=-6V
RG=10kW,f=100Hz
-0.1
190
2.0
-0.3
V
MHz
pF
100
Cob
NF
3.0
6.0
Noise Figure
4.0
dB
1
UTC UNISONIC TECHNOLOGIES CO. LTD
UTC2SA733
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
R
Q
P
K
RANGE
90-180
135-270
200-400
300-600
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
-100
-80
3
2
10
10
VCE=-6V
1
VCE=-6V
10
B
m
2
10
I = -300 A
= -250
= -200mA
-60
-40
IB
mA
IB
1
0
10
B
m
I = -150 A
= -100
= -50
10
-20
0
IB
mA
IB
mA
0
-1
10
10
0
-4
-8
-12
-16
-20
-1
10
0
1
2
3
10
0
-0.2
-0.4
-0.6
-0.8
-1.0
10
10
10
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
Fig.4 Saturation voltage
4
3
10
2
10
10
Ic=10*I
B
VCE=-6V
f=1MHz
3
2
10
BE
V
(sat)
IE
=0
10
1
10
2
1
10
0
10
10
VCE(sat)
-1
10
1
0
10
10
3
0
1
2
3
10
-1
10
0
1
2
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
相关型号：
2SA733-BP
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MCC
2SA733-K-AL3-R
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN
UTC
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