2SA928AG-Y-AB3-R [UTC]

Small Signal Bipolar Transistor,;
2SA928AG-Y-AB3-R
型号: 2SA928AG-Y-AB3-R
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Small Signal Bipolar Transistor,

文件: 总4页 (文件大小:233K)
中文:  中文翻译
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UNISONIC TECHNOLOGIES CO., LTD  
2SA928A  
PNP SILICON TRANSISTOR  
AUDIO POWER AMPLIFIER  
1
FEATURES  
SOT-89  
* Collector Dissipation PC=1 W  
* 3 W Output Application  
* Complement of 2SC2328A  
1
TO-92  
1
TO-92NL  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
Halogen Free  
1
B
E
E
E
E
2
3
E
B
B
B
B
2SA928AL-x-AB3-R  
2SA928AL-x-T92-B  
2SA928AL-x-T92-K  
2SA928AL-x-T9N-B  
2SA928AL-x-T9N-K  
2SA928AG-x-AB3-R  
2SA928AG-x-T92-B  
2SA928AG-x-T92-K  
2SA928AG-x-T9N-B  
2SA928AG-x-T9N-K  
SOT-89  
TO-92  
C
C
C
C
C
Tape Reel  
Tape Box  
Bulk  
TO-92  
TO-92NL  
TO-92NL  
Tape Box  
Bulk  
2SA928AG-x-AB3-R  
(1)Packing Type  
(2)Package Type  
(3)Rank  
(1) R: Tape Reel. B: Tape Box, K: Bulk  
(2) AB3: SOT-89, T92:TO-92, T9N: TO-92NL  
(3) x: refer to Classification of hFE  
(4)Green Package  
(4) G: Halogen Free and Lead Free, L: Lead Free  
MARKING  
SOT-89  
TO-92  
TO-92NL  
UTC  
2SA928A  
UTC  
A928A  
L: Lead Free  
G: Halogen Free  
L: Lead Free  
G: Halogen Free  
Date Code  
2SA928A  
L: Lead Free  
G: Halogen Free  
Date Code  
Date Code  
1
1
www.unisonic.com.tw  
Copyright © 2020 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R211-009.F  
2SA928A  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector- Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-30  
-30  
V
-5  
V
-2  
A
SOT-89  
0.5  
W
W
C  
C  
Collector Dissipation  
PC  
TO-92/TO-92NL  
1.0  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)  
PARAMETER  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
IC =-100μA, IE =0  
MIN TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collect Cut-off Current  
-30  
-30  
-5  
V
V
IC =-1mA, IB =0  
IE =-1mA, IC =0  
V
VCB =-30V, IE =0  
VBE =-5V, IC =0  
-100  
-100  
320  
-1  
nA  
nA  
Emitter Cut-off Current  
IEBO  
DC Current Ratio  
hFE  
VCE =-2V, IC =-500mA  
VCE =-2V, IC =-500mA  
100  
Base-Emitter on Voltage  
VBE(ON)  
V
V
Collector-Emitter Saturation Voltage  
Output Capacitance  
VCE(SAT) IC =-1.5A, IB =-30mA  
-2  
COB  
fT  
VCB =-10V, IE =0, f =1MHz  
VCE =-2V, IC =-500mA  
48  
pF  
MHZ  
Current Gain Bandwidth Product  
120  
CLASSIFICATION OF hFE  
RANK  
Q
Y
RANGE  
100 ~ 200  
160 ~ 320  
UNISONICTECHNOLOGIESCO.,LTD  
2 of 4  
QW-R211-009.F  
www.unisonic.com.tw  
2SA928A  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Base-Emitter On Voltage  
VCE=-2V  
Static Characteristic  
IB=-7mA  
-1400  
-1200  
-1000  
-800  
-600  
-400  
-200  
0
-1400  
-1200  
-1000  
-800  
-600  
-400  
-200  
0
IB=-6mA  
IB=-5mA  
IB=-4mA  
IB=-3mA  
IB=-2mA  
IB=-1mA  
-1.4  
-2 -4  
-6  
-8 -10 -12 -14 -16  
0
-0.4 -0.6 -0.8 -1.0 -1.2  
0
-0.2  
Collector-Emitter Voltage, VCB (V)  
Base-Emitter Voltage, VBE (V)  
DC Current Gain  
Collector-Emitter Saturation Voltage  
-3  
-1  
1000  
500  
300  
-0.5  
-0.3  
IC=50IB  
Ta=25°C  
VCE=-2V  
-0.1  
100  
-0.05  
-0.03  
50  
30  
10  
-0.01  
-1 -3 -10 -30 -100 -300 -1000 -3000  
-1  
-3 -10  
-100 -300 -1000 -3000  
-30  
Collector Curremt, ID (mA)  
Collector Curremt, ID (mA)  
Power Derating  
Safe Operating Area  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
-5  
-3  
IC(MAX) Pulse  
IC(MAX)  
1ms  
-1  
1s  
-0.5  
-0.3  
-0.1  
-0.05  
-0.03  
Ta=25°C  
VCEO(MAX)  
D.C. Operation  
-0.01  
0
0
20 40 60 80 100 120 140 160  
Ambient Temperature, Ta (°C)  
-0.5 -1  
-3 -5 -10 -30-50 -100  
-0.1 -0.3  
Collector Emitter Voltage, VCB (V)  
UNISONICTECHNOLOGIESCO.,LTD  
3 of 4  
QW-R211-009.F  
www.unisonic.com.tw  
2SA928A  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all UTC products described or contained herein.  
UTC products are not designed for use in life support appliances, devices or systems where malfunction  
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in  
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to  
make changes to information published in this document, including without limitation specifications and  
product descriptions, at any time and without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
UNISONICTECHNOLOGIESCO.,LTD  
4 of 4  
QW-R211-009.F  
www.unisonic.com.tw  

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