2SA928AO [UTC]
Transistor;
| 型号： | 2SA928AO |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SC2328A
1
TO-92NL
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
RATING
UNIT
V
V
V
W
-30
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current
-30
-5
1
-2
Ic
A
Junction Temperature
Storage Temperature
Tj
TSTG
150
-55 ~ +150
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
Ic=-100µA,IE=0
MIN TYP MAX UNIT
-30
-30
-5
V
V
Ic=-10mA,IB=0
IE=-1mA,Ic=0
VCB=-30V,IE=0
V
nA
nA
-100
-100
320
-1
Emitter cut-off current
DC current gain(note)
Base-emitter on voltage
Collector-emitter saturation voltage
Output capacitace
IEBO
hFE
VBE(on)
VCE(sat)
Cob
VBE=-5V,Ic=0
VCE=-2V,Ic=-500mA
VCE=-2V,Ic=-500mA
Ic=-1.5A,IB=-0.03A
VCB =-10V, IE =0,f=1MHz
VCE=-2V,Ic=-500mA
100
V
V
-2
48
120
pF
MHz
Current gain bandwidth product
fT
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
100-200
160-320
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R211-009,A
UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC CURVES
FIG.1 STATIC
FIG.2 BASE-EMITTER ON VLOTAGE
CHARACTERISTIC
-1400
-1400
-1200
-1000
-800
-600
-400
-200
0
I
I
B
=-7mA
=-6mA
-1200
-1000
-800
-600
-400
-200
0
VCE=-2V
B
I
I
B
=-5mA
=-4mA
B
I
I
I
B=-3mA
B=-2mA
B=-1mA
0
-2 -4 -6 -8 -10 -12 -14 -16
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE(V),BASE-EMITTER VOLTAGE
VCE(V),COLLECTOR-EMITTER VOLTAGE
FIG.3 DC CURRENT GAIN
FIG.4 COLLECTOR-EMITTER SATURATION VOLTAGE
-3
1000
-1
500
300
-0.5
-0.3
Ic=50l
B
VCE=-2V
Ta=25°C
100
-0.1
50
30
-0.05
-0.03
10
-0.01
-3000
-3000
-1 -3 -10 -30 -100 -300 -1000
Ic(mA),COLLECTOR CURRENT
-1 -3 -10 -30 -100 -300 -1000
Ic(mA),COLLECTOR CURRENT
FIG.5 POWER DERATING
FIG.6 SAFE OPERATING AREA
-5
-3
1.2
1.0
0.8
0.6
0.4
0.2
0
Ic(MAX) PULSE
Ic(MAX)
1ms
-1
Ta=25°C
1s
D.C
OPERATION
-0.5
-0.3
-0.1
-0.05
-0.03
V
CEO MAX
-0.01
0
20 40 60 80 100 120 140 160
Ta(°C),AMBIENT TEMPERATURE
-0.1 -0.3-0.5 -1 -3 -5 -10 -30-50 -100
CE(V), COLLECTOR EMITTER VOLTAGE
V
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R211-009,A
UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R211-009,A
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