2SB1198L-X-AE3-R [UTC]
LOW FREQUENCY PNP TRANSISTOR; 低频PNP晶体管
| 型号： | 2SB1198L-X-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW FREQUENCY PNP TRANSISTOR |
| 文件： | 总4页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1198
PNPEPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP
TRANSISTOR
3
DESCRIPTION
The UTC 2SB1198 is an epitaxial planar type PNP silicon
transistor.
1
2
SOT-23
FEATURES
* High breakdown voltage : BVCEO= -80V
* Low VCE(sat) : VCE(sat)= -0.2V (Typ)
(IC/IB = -0.5A/-50mA)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-23
Packing
Tape Reel
Lead Free
Halogen Free
2SB1198G-x-AE3-R
1
2
3
2SB1198L-x-AE3-R
E
B
C
Note: xx: Output Voltage, refer to Marking Information.
MARKING
www.unisonic.com.tw
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Copyright © 2011 Unisonic Technologies Co., LTD
QW-R206-040,B
2SB1198
PNPEPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-80
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-80
V
-5
V
-0.5
A
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
0.2
W
℃
℃
TJ
150
TSTG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage BVCEO IC= -2mA
SYMBOL
TEST CONDITIONS
MIN
-80
-80
-5
TYP MAX
UNIT
V
BVCBO IC= -50μA
V
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVEBO IE= -50μA
V
ICBO
IEBO
VCB= -50V
VEB= -4V
-0.5
-0.5
μA
μA
V
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
VCE(sat) IC/IB= -0.5A/-50mA
-0.2
-0.5
390
hFE
fT
VCE= -3V, IC= -0.1A
120
VCE=-10V, IE= 50 mA, f=100MHz
VCB= -10V, IE= 0 A, f=1MHz
180
11
MHz
pF
Output Capacitance
Cob
CLASSIFICATION OF hFE
RANK
RANGE
Q
R
120-270
AKQ
180-390
AKR
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-040,B
www.unisonic.com.tw
2SB1198
PNPEPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Figure 1. Grounded Emitter
Propagation Characteristics
Figure 2. Grounded Emitter
Output Characteristics
-0.5
-10
-5.0mA
Ta=25℃
-45mA
-40mA
-35mA
-30mA
-25mA
-20mA
-5
-2
VCE = -3V
-0.4
-0.3
-0.2
Ta=100℃
-1
-500m
Ta=25℃
-200m
-100m
-50m
-1.5mA
Ta= -25℃
-1.0mA
-0.5mA
-20m
-10m
-5m
-0.1
-2m
-1m
0
IB =0mA
-1.6 -2.0
Collector To Emitter Voltage, VCE (V)
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, VBE (V)
-0.4 -0.8 -1.2
Figure 6. Collector-Emitter Saturation
Voltage vs. Collector Current (III)
Figure 5. Collector-emitter Saturation
Voltage vs. Collector Current (II)
-2
-2
IC/IB=20
IC/IB=10
-1
-1
-500m
-500m
-200m
Ta= 100℃
Ta= 25℃
-200m
Ta= 100℃
-100m
-50m
-100m
-50m
Ta= -25℃
Ta= 25℃
Ta= -25℃
-20m
-10m
-20m
-10m
-1
-10
-100
-1A
-10
-100
-1
-1A
Collector Current, IC (mA)
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-040,B
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2SB1198
PNPEPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-040,B
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