2SB1202T(TO-252) [UTC]
Transistor;
| 型号： | 2SB1202T(TO-252) |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SB1202 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
FEATURES
1
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
TO-252
1: BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
V
-60
-50
-6
1
15
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation
Tc=25°C
V
W
W
A
A
°C
°C
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
Ic
Icp
Tj
-3
-6
150
TSTG
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (note)
SYMBOL
ICBO
TEST CONDITIONS
VCB=-40V,IE=0
MIN TYP MAX UNIT
-1
-1
560
µA
µA
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
VEB=-4V,IC=0
VCE=-2V, Ic=-100mA
VCE=-2V, Ic=-3A
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
IC=-2A, IB=-100mA
IC=-2A, IB=-100mA
IC=-10µA, IE=0
IC=-1mA, RBE=∞
IE=-10µA, IC=0
See test circuit
100
35
Gain-Bandwidth Product
Output Capacitance
150
39
-0.35 -0.7
-0.94 -1.2
MHz
pF
V
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
V
-60
-50
-6
V
V
V
ns
70
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-005,A
UTC2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
PARAMETER
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
See test circuit
MIN TYP MAX UNIT
tstg
tf
450
35
ns
ns
See test circuit
CLASSIFICATION OF hFE1
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560
TEST CIRCUIT FOR NPN (PNP: the polarity is reversed; Unit: resistance: Ω, capacitance: F)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-005,A
UTC2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-005,A
UTC2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R209-005,A
相关型号：
2SB1202UTP
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN
ONSEMI
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