2SB1260R-G [UTC]
Transistor;
| 型号： | 2SB1260R-G |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总1页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1260
TRANSISTOR (PNP)
SOT-89
FEATURES
1. BASE
Power dissipation
PCM:
Collector current
ICM:
0.5
-1
W (Tamb=25℃)
2. COLLECTOR
3. EMITTER
1
2
A
V
3
Collector-base voltage
V(BR)CBO
:
-80
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=-50µA , IE=0
MIN
-80
-80
-5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -1mA , IB=0
IE=-50µA, IC=0
V
V
VCB=-60 V , IE=0
VEB=-4 V , IC=0
-1
-1
µA
µA
IEBO
Emitter cut-off current
hFE
DC current gain
V
CE=-3V, IC= -0.1A
82
80
390
-0.4
VCE(sat)
IC=-500 mA, IB= -50mA
VCE= -5V, IC=- 50mA
V
Collector-emitter saturation voltage
MHz
Transition frequency
f T
f = 30MHz
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
ZL
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