2SB1386_15 [UTC]
LOW FREQUENCY PNP TRANSISTOR;
| 型号： | 2SB1386_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | LOW FREQUENCY PNP TRANSISTOR |
| 文件： | 总5页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB1386
PNP SILICON TRANSISTOR
LOW FREQUENCY PNP
TRANSISTOR
1
FEATURES
* Excellent DC current gain characteristics
* Low VCE(SAT)
VCE(SAT)= -0.35V (Typ)
(IC/IB = -4A/-0.1A)
SOT-89
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
SOT-89
Lead Free
Halogen Free
2SB1386G-x-AB3-R
1
2
3
2SB1386L-x-AB3-R
B
C
E
Tape Reel
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R208-019,C
2SB1386
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC(DC)
IC(PULSE)
PC
RATINGS
UNIT
V
Collector-Base Voltage
-30
-20
Collector-Emitter Voltage
Emitter-Base Voltage
V
-6
V
Collector Current (DC)
-5
A
Collector Current (Pulse)(Note1)
Collector Power Dissipation
Junction Temperature
-10
A
0.5
W
℃
℃
TJ
150
Storage Temperature
TSTG
-55 ~ +150
Note 1. Single pulse, Pw=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC= -50μA
MIN
-30
-20
-6
TYP MAX UNIT
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
V
V
V
BVCEO
IC= -1mA
BVEBO
IE= -50μA
VCE(SAT) IC/IB= -4A/-0.1A
-1.0
-0.5
-0.5
390
V
ICBO
IEBO
hFE
fT
VCB= -20V
μA
μA
Emitter Cut-off Current
VEB= -5V
DC Current Gain
VCE= -2V, IC= -0.5A
VCE= -6V, IE= 50mA, f=30MHz
VCB= -20V, IE= 0A, f=1MHz
82
Transition Frequency
120
60
MHz
pF
Output Capacitance
Cob
CLASSIFICATION OF hFE
RANK
P
Q
R
RANGE
82-180
120-270
180-390
UNISONIC TECHNOLOGIES CO., LTD
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2SB1386
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs. Base to Emitter
Voltage
Collector Current vs. Collector to Emitter
Voltage
-10
-5
-5
-4
-50mA
-45mA
-30mA
-25mA
Ta=25℃
VCE = -2V
-2
-20mA
Ta=100℃
-1
-500m
-15mA
Ta=25℃
-3
-2
-1
-200m
-10mA
-35mA
-100m
-50m
Ta= -25℃
-40mA
-0.8
-5mA
-20m
-10m
-5m
-2m
-1m
IB =0mA
-1.6 -2.0
0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, VBE(V)
0
-0.4
-1.2
Collector to Emitter Voltage, VCE(V)
DC Current Gain vs. Collector Current(2)
5k
DC Current Gain vs. Collector Current(1)
5k
Ta=25℃
VcE= -1V
2k
1k
2k
1k
Ta=100℃
500
500
VcE= -5V
200
100
200
100
VcE= -2V
VcE= -1V
Ta=25℃
Ta= -25℃
50
50
20
10
20
10
5
5
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-1m-2m
-1
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-1m-2m
-1
Collector Current, IC(A)
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (1)
DC Current Gain vs. Collector Current
VcE= -2V
5k
-5
Ta=25℃
2k
1k
-2
-1
Ta=100℃
500
-0.5
Ic/IB=50/1
40/1
200
100
-0.2
-0.1
Ta= -25℃
Ta=25℃
30/1
10/1
50
-0.05
20
10
-0.02
-0.01
5
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-2m
-1
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-1m-2m
-1
Collector Current, Ic(A)
Collector Current, Ic(A)
UNISONIC TECHNOLOGIES CO., LTD
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2SB1386
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
Collector-Emitter Saturation Voltage vs.
Collector Current (2)
Collector-Emitter Saturation Voltage vs.
Collector Current (3)
-5
-5
Ic/IB=10
Ic/IB=30
-2
-1
-2
-1
Ta=100℃
Ta=25℃
-0.5
-0.5
-0.2
-0.1
-0.2
-0.1
Ta=100℃
-0.05
-0.05
Ta=25℃
Ta= -25℃
-0.02
-0.01
-0.02
-0.01
Ta= -25℃
-0.05 -0.1-0.2
-0.01-0.02
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-5m
-0.5
-2 -5 -10
-2m
-1
-2m
-1
Collector Current, Ic(A)
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (IV)
Collector-Emitter Saturation Voltage vs.
Collector Current (V)
-5
-5
Ic/IB=40
Ic/IB=50
Ta= -25℃
Ta=25℃
Ta= -25℃
-2
-1
-2
-1
Ta=25℃
Ta=100℃
-0.5
-0.5
-0.2
-0.1
-0.2
-0.1
Ta=100℃
-0.05
-0.05
-0.02
-0.01
-0.02
-0.01
-0.05 -0.1-0.2
-0.01-0.02
-0.05 -0.1-0.2
-0.01-0.02
-5m
-0.5
-2 -5 -10
-5m
-0.5
-2 -5 -10
-2m
-1
-2m
-1
Collector Current, Ic(A)
Collector Current, Ic(A)
Collector Output Capacitance vs.
Collector-Base Voltage
Transetion Frequency vs. Emitter Current
1000
1000
500
Ta=25℃
Ta=25℃
500
f =1MHz
IE=0A
VcE= -6V
200
100
200
50
100
50
20
10
5
20
10
2
1
1
-0.1 -0.2
-1 -2
-5 -10 -20 -50
Collector to Base Voltage, VCB(V)
5
2
10 20
-0.5
50 100200 500 1000
Emitter Current, IE(mA)
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2SB1386
PNP SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
Emitter Input Capacitance vs. Emitter-
Base Voltage
1000
500
Ic=0A
200
100
50
Ta=25℃
20
f=1MHz
-0.2
-0.5 -1
-2
-5 -10
-0.1
Emitter To Base Voltage, VEB(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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