2SB649_09 [UTC]
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR; 双极型功率通用晶体管
| 型号： | 2SB649_09 |
| 厂家： | 
Unisonic Technologies |
| 描述： | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 文件： | 总4页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
PNP SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
1
SOT-89
TO-92
TO-252
APPLICATIONS
Low frequency power amplifier complementary pair with UTC
2SD669/A
*
1
1
TO-92NL
1
1
TO-126
TO-126C
Lead-free:
2SB649L/2SB649AL
Halogen-free: 2SB649G/2SB649AG
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free
Halogen Free
1
B
E
E
E
E
E
E
B
2
C
C
C
C
C
C
C
C
3
E
B
B
B
B
B
B
E
2SB649x-x-AB3-R 2SB649xL-x-AB3-R 2SB649xG-x-AB3-R
2SB649x-x-T6C-K 2SB649xL-x-T6C-K 2SB649xG-x-T6C-K
2SB649x-x-T60-K 2SB649xL-x-T60-K 2SB649xG-x-T60-K
2SB649x-x-T92-B 2SB649xL-x-T92-B 2SB649xG-x-T92-B
2SB649x-x-T92-K 2SB649xL-x-T92-K 2SB649xG-x-T92-K
2SB649x-x-T9N-B 2SB649xL-x-T9N-B 2SB649xG-x-T9N-B
2SB649x-x-T9N-K 2SB649xL-x-T9N-K 2SB649xG-x-T9N-K
2SB649x-x-TN3-R 2SB649xL-x-TN3-R 2SB649xG-x-TN3-R
SOT-89
TO-126C
TO-126
TO-92
Tape Reel
Bulk
Bulk
Tape Box
Bulk
TO-92
TO-92NL
TO-92NL
TO-252
Tape Box
Bulk
Tape Reel
(1) B: Tape Box, K: Bulk, R: Tape Reel
2SB649xL-x-AB3-R
(2) AB3: SOT-89, T6C: TO-126C, T60: TO-126,
(2) T92: TO-92, T9N: TO-92NL, TN3: TO-252
(3) x: refer to Classification of hFE1
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
(5) A: -160V, Blank: -120V
(5) Collector-Emitter Voltage
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R204-006,G
2SB649/A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
RATING
UNIT
V
Collector-Base Voltage
-180
2SB649
-120
V
Collector-Emitter Voltage
VCEO
2SB649A
-160
V
Emitter-Base Voltage
Collector Current
VEBO
IC
-5
V
-1.5
A
Collector Peak Current
lC(PEAK)
-3
A
TO-126/TO-126C
TO-92/TO-92NL
SOT-89
1
0.6
W
W
W
W
°C
°C
Collector Power Dissipation
PC
0.5
TO-252
2
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
Collector to Base Breakdown Voltage
MIN TYP MAX UNIT
BVCBO IC=-1mA, IE=0
BVCEO IC=-10mA, RBE=∞
BVEBO IE=-1mA, IC=0
-180
-120
-160
-5
V
Collector to Emitter Breakdown
Voltage
2SB649
V
2SB649A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
V
ICBO
hFE1
hFE2
hFE1
hFE2
VCB=-160V, IE=0
-10
μA
VCE=-5V, IC=-150mA (note)
VCE=-5V, IC=-500mA (note)
VCE=-5V, IC=-150mA (note)
VCE=-5V, IC=-500mA (note)
60
30
60
30
320
2SB649
DC Current Gain
200
2SB649A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT) IC=-600mA, IB=-50mA
-1
V
V
VBE
fT
VCE=-5V, IC=-150mA
VCE=-5V,IC=-150mA
VCB=-10V, IE=0, f=1MHz
-1.5
Current Gain Bandwidth Product
Output Capacitance
140
27
MHz
pF
Cob
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK
C
RANGE
B
D
2SB649
60-120
60-120
100-200
100-200
160-320
-
2SB649A
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-006,G
www.unisonic.com.tw
2SB649/A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
Typical Transfer Characteristics
-500
-100
1.0
0.8
0.6
0.4
0.2
VCE=-5V
-2.0
-1.5
-10
-1
-1.0
-0.5mA
IB=0
TC=25°С
-40 -50
0
-10
-20
-30
0
-0.2
-0.4
-0.6
-0.8
-1.0
Collector to Emitter Voltage, VCE (V)
Base to Emitter Voltage, VBE (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
DC Current Transfer Ratio vs.
Collector Current
350
300
250
-1.2
-1.0
IC=10 IB
VCE=-5V
-0.8
-0.6
200
150
100
-0.4
-0.2
0
50
1
-1
-10
-100
-1,000
-1
-10
-100
-1,000
Collector Current, IC (mA)
Collector Current, IC (mA)
Base to Emitter Saturation Voltage
vs. Collector Current
Gain Bandwidth Product
vs. Collector Current
VCE=5V
Ta=25°С
-1.2
-240
-200
-160
-120
-80
IC=10IB
-1.0
-0.8
-0.6
-0.4
-0.2
0
-40
0
-10
-1
-3
-10 -30 -100 -300 -1000
Collector Current, IC (mA)
-30
-100
-300
-1000
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-006,G
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2SB649/A
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
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