2SB688O [UTC]
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN;
| 型号： | 2SB688O |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC 2SB688
PNP EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
FEATURES
* Complementary to 2SD718.
* Recommended for 45 ~ 50W Audio Frequency Amplifier
Output Stage.
1
TO-3P
1: BASE 2: COLLECTOR 3: EMITTER
*Pb-free plating product number: 2SB688L
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Collector-Base Voltage
SYMBOL
RATINGS
UNIT
V
VCBO
VCEO
VEBO
IC
-120
-120
-5
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
V
V
-10
A
Base Current
IB
-1
A
Collector Power Dissipation (TC=25℃)
PC
80
W
℃
℃
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-40 ~ +150
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
SYMBOL
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE
fT
Cob
TEST CONDITIONS
MIN
TYP
MAX
-10
-10
UNIT
µA
µA
VCB = -120V, IE = 0
VEB = -5V, IC = 0
IC = -50mA, IB= 0
VCE = -5V, IC = -1A
IC = -5A, IB = -0.5A
VCE = -5A, IC= -5A
VCE = -5A, IC= -1A
-120
55
V
160
-2.5
-1.5
V
V
MHz
pF
10
280
Collector Output Capacitance
VCB = -10V, IE = 0, f=1MHz
CLASSIFICATION OF hFE
RANK
R
O
RANGE
55 ~ 110
80 ~ 160
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
www.unisonic.com
QW-R214-007,A
UTC 2SB688
TYPICAL CHARACTERISTICS
PNP EPITAXIAL SILICON TRANSISTOR
PC - Ta
IC - VCE
100
-10
(1)Ta=Tc
COMMON EMITTER
INFINITEHEATSINK
TC=25℃
(1)
80
60
(2)300×300×2mm A1
HEAT SINK
(3)200×200×2mm A1
HEAT SINK
(4)100×100×2mm A1
HEAT SINK
(5)NO HEAT SINK
-8
-6
-200mA
-100mA
(2)
(3)
40
20
-4
-2
-50mA
IB= -20mA
(4)
(5)
0mA
0
0
0
120
160
200
240
-10
-8
40
80
0
-2
--12
-14
-4
-6
COLLECTOR EMITTER VOLTAGE, VCE (V)
AMBIENT TEMPERATURE, Ta (℃)
VCE(sat) - IC
SAFE OPERATING AREA
-5
-30
COMMON EMITTER
IC/IB=10
IC MAX. (PULSED)※
-3
t=1ms※
t=10ms※
t=100ms※
t=500ms※
IC MAX
(CONTINUOUS)
-10
-1
-5
-3
-0.5
-0.3
-1
TC=25℃
TC=-25 ℃
-0.1
※SINGLE NONREPETITIVE
PULSE TC=25℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
-0.5
-0.3
-0.05
-0.03
-0.01
-0.1
-1
-30
-100
-300
-3
-10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
COLLECTOR EMITTER VOLTAGE, VCE (V)
COLLECTOR CURRENT, IC (A)
hFE - IC
1K
COMMON EMITTER
VCE=-5V
500
300
TC=100℃
TC=25℃
100
TC= -25℃
50
30
10
-3
-0.01
-0.03
-0.1
-0.3
-1
-10
COLLECTOR CURRENT, IC (A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
www.unisonic.com
QW-R214-007,A
相关型号：
2SB688R
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
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