2SB772EL-T6C-T [UTC]
Transistor;
| 型号： | 2SB772EL-T6C-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD.
2SB772
PNPEPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
ꢀ
DESCRIPTION
The UTC 2SB772 is a medium power low voltage transistor,
designed for audio power amplifier, DC-DC converter and
voltage regulator.
1
ꢀ
FEATURES
TO-126C
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882
* Pb-free plating product number: 2SB772L
ꢀ
PIN CONFIGURATION
PIN NO.
PIN NAME
Base
1
2
3
Collector
Emitter
ꢀ ORDERING INFORMATION
Order Number
Package
TO-126C
Packing
Tube
Normal
Lead free
2SB772-T6C-T 2SB772L-T6C-T
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD.
1
QW-R217-002.B
2SB772
PNPEPITAXIAL SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IB
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
-40
V
V
V
A
-30
-5
-0.6
DC
IC
-3
Collector Current
A
PULSE
Tc=25°C
Ta=25°C
ICM
-7
10
Collector Dissipation
Pc
W
1
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
°C
°C
TSTG
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
VCE(sat)
VBE(sat)
ICBO
TEST CONDITIONS
IC =-2A, IB= -0.2A
MIN TYP MAX UNIT
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
-0.3
-1.0
-0.5
-2.0
V
V
IC = -2A, IB= -0.2A
VCB= -30V, IE=0
-1000
-1000
nA
nA
Emitter Cut-Off Current
IEBO
VEB= -3V, IC =0
hFE1
hFE2
VCE= -2V, IC = -20mA
30
100
200
150
80
DC Current Gain(Note 1)
VCE= -2V, IC = -1A
400
Current Gain Bandwidth Product
Output Capacitance
fT
VCE= -5V, IC = -0.1A
MHz
pF
Cob
VCB= -10V, IE=0, f=1MHz
45
Note 1: Pulse test: PW<300µs, Duty Cycle<2%
ꢀ
CLASSIFICATION OF hFE2
RANK
Q
P
E
200 ~ 400
RANGE
100 ~ 200
160 ~ 320
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R217-002.B
2SB772
PNPEPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
operating areas
Derating curve of safe
Static characteristics
150
100
1.6
-IB 9mA
=
-IB=8mA
-IB=7mA
1.2
0.8
-IB=6mA
-IB=5mA
S
/
b
l
i
m
D
i
t
e
i
s
d
s
i
p
-IB= 4mA
a
t
i
50
0
o
n
-IB= 3mA
-IB=2mA
l
i
m
0.4
0
i
t
e
d
-IB=1mA
0
4
8
12
16
20
-40
0
40
80 120 150
( )
-Collector
-Emitter Voltage,(V)
Case Temperature, TC
℃
Power derating
capacitance
IE=0
Collector output
103
12
8
f=1MHz
102
101
4
0
100
1
2
-
100
10
10
10 3
-
-
-40
0
40
Case Temperature, TC (℃)
80
120 150
-Collector-Base Voltage (V)
Safe operating area
Current gain-
bandwidth product
VCE=5V
3
10
Ic(max), Pulse
1
0
10
.
1
m
s
Ic (max), DC
2
10
100
IBB=8mA
1
10
-
10 1
0
10
10-2
1
-
1
10-2
10
100
10
0
1
2
10
10
Emitter Voltage
10
Collector Current, IC (A)
Collector-
UNISONIC TECHNOLOGIES CO., LTD
3
www.unisonic.com.tw
QW-R217-002.B
2SB772
PNPEPITAXIAL SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS (cont.)
DC current gain
Saturation Voltage
103
102
101
-2V
104
VCE=
VBE
( sat)
103
102
V (sat)
CE
101
100
100
100
101
102
103
104
100
101
102
103
104
-Collector current, I
C (mA)
-Collector Current, IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R217-002.B
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