2SB824L-X-TM3-T [UTC]
PNP PLANAR SILICON TRANSISTOR; PNP平面硅晶体管型号: | 2SB824L-X-TM3-T |
厂家: | Unisonic Technologies |
描述: | PNP PLANAR SILICON TRANSISTOR |
文件: | 总5页 (文件大小:251K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SB824
PNP SILICON TRANSISTOR
PNP PLANAR SILICON
TRANSISTOR
1
SOT-89
FEATURES
* Low collector-to-emitter saturation voltage:
VCE(SAT)=-0.4V max/IC=-3A, IB=-0.3A
1
TO-251
1
TO-126
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
2SB824L-x-AB3-R
2SB824L-x-T60-K
2SB824L-x-TM3-T
2SB824G-x-AB3-R
2SB824G-x-T60-K
2SB824G-x-TM3-T
SOT-89
TO-126
TO-251
Tape Reel
Bulk
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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2SB824
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
-60
V
V
V
A
A
-50
-6
-5
Collector Current (Pulse)
ICP
-9
0.5
SOT-89
TO-126/ TO-251
Collector Dissipation
PC
W
1
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
℃
℃
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER SYMBOL TEST CONDITIONS
MIN
-60
-50
-6
TYP MAX UNIT
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
BVCBO IC =-1mA, IE=0
BVCEO IC=-1mA, RBE =∞
BVEBO IC =0, IE=-1mA
V
V
V
ICBO
IEBO
hFE1
hFE2
fT
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-1A
-0.1
-0.1
360
mA
mA
Emitter Cut-Off Current
70
30
DC Current Gain
VCE=-2V, IC=-3A
VCE =-5V, IC =-1A
VCB =-10V, f=1MHz
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
30
MHZ
pF
V
COB
100
VCE(SAT) IC=-3A, IB=-0.3A
-0.4
tON
tSTG
tF
See specified test circuit
0.1
1.4
0.2
μs
Storage Time
See specified test circuit
See specified test circuit
μs
Fall Time
μs
CLASSIFICATION of hFE1
RANK
Q
R
S
RANGE
70-140
100-200
180-360
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2SB824
PNP SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
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2SB824
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
Base-Emitter Saturation Voltage vs.
Collector Current
10
10
IC/IB=20
7
5
3
2
5
3
2
1.0
5
3
2
IC/IB=10
IC/IB=20
1.0
-20
0.1
7
5
5
25
3
2
3
2
0.01
2
3
5
2
3
5
2
3
5
2
2
3
5
2
3
5
2
3
5
2
0.1
1.0
10
0.1
1.0
10
Collector Current, -IC (A)
Collector Current, -IC (A)
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2SB824
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Transition Frequency vs. Collector Current
ASO
2
10000
3000
1000
VCE=-5V
f=1MHz
TC=25℃
ICP
IC
10
7
5
3
2
300
100
1.0
7
5
30
10
3
2
(Single pulse with
regard to 1 ~ 100ms)
3
1
0.1
5
2
3
71.0
5
7
2
3
5
7 100
0.01 0.03
0.1
0.3
1
3
10
10
Collector Current, -IC (A)
Collector-to-Emitter Voltage, -VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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