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2SB834G-GR-TF3-T [UTC]

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN;
2SB834G-GR-TF3-T
型号： 2SB834G-GR-TF3-T
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, HALOGEN FREE, TO-220F, 3 PIN
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UNISONIC TECHNOLOGIES CO., LTD  
2SB834  
PNP SILICON TRANSISTOR  
HIGH VOLTAGE TRANSISTOR  
DESCRIPTION  
Low frequency power amplifier applications.  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
Lead Free  
2SB834L-x-AB3-R  
Halogen Free  
1
B
E
B
B
B
2
C
C
C
C
C
3
E
B
E
E
E
SOT-89  
TO-126  
TO-220  
TO-220F  
TO-252  
Tape Reel  
Bulk  
2SB834G-x-AB3-R  
2SB834G-x-T60-K  
2SB834G-x-TA3-T  
2SB834G-x-TF3-T  
2SB834G-x-TN3-R  
2SB834L-x-T60-K  
2SB834L-x-TA3-T  
Tube  
2SB834L-x-TF3-T  
Tube  
2SB834L-x-TN3-R  
Tape Reel  
Note: Pin Assignment: B: Base  
C: Collector  
E: Emitter  
www.unisonic.com.tw  
1 of 5  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R204-018.F  
2SB834  
PNP SILICON TRANSISTOR  
MARKING INFORMATION  
PACKAGE  
MARKING  
SOT-89  
TO-220  
TO-220F  
TO-252  
TO-126  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 5  
QW-R204-018.F  
www.unisonic.com.tw  
2SB834  
PNP SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified )  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
-60  
-60  
-7  
V
V
-3  
A
Base Current  
IB  
-0.5  
3
A
SOT-89  
W
W
W
W
TO-220  
30  
26  
25  
Power Dissipation (TC=25°C)  
PD  
TO-252  
TO-126/TO-220F  
Junction Temperature  
Storage Temperature  
TJ  
+125  
°C  
°C  
TSTG  
-40 ~ +150  
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER  
Collector-Emitter Breakdown Voltage  
Collector Cut-Off Current  
SYMBOL  
BVCEO IC=-50mA  
TEST CONDITIONS  
MIN  
-60  
TYP  
MAX UNIT  
V
ICBO  
IEBO  
VCB=-60V  
VEB=-7V  
-100  
-100  
-1  
μA  
μA  
V
Emitter Cut-Off Current  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
VCE(SAT) IC=-3A, IB=0.3A  
VBE(ON) VCE=-5V, IC=-0.5A  
-0.7  
9
-1  
V
hFE1  
hFE2  
fT  
IC=-0.5A, VCE=-5V  
IC=-3A, VCE=-5V  
VCE=-5V, IC=-0.5A  
60  
20  
300  
DC Current Gain  
Current Gain Bandwidth Product  
MHZ  
CLASSIFICATION of hFE1  
RANK  
O
Y
GR  
150-300  
RANGE  
60-120  
100-200  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 5  
QW-R204-018.F  
www.unisonic.com.tw  
2SB834  
PNP SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Collector Current vs.  
Collector-Emitter Voltage  
Power Derating  
40  
35  
-3.0  
-2.0  
-1.0  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
30  
25  
20  
15  
10  
5
TO-220  
IB = -10mA  
TO-126/TO-220F  
SOT-89  
TC=25°C  
0
0
-1.0  
-2.0  
-3.0  
-4.0  
-5.0  
-6.0  
75  
125  
150  
0
100  
25  
50  
Temperature, TC (°C)  
Collector-Emitter Voltage, VCE (V)  
Collector Current vs.  
Base-Emitter Voltage  
DC Current Gain  
-3.0  
-2.0  
-1.0  
VCE = 5.0V  
VCE = 5.0V  
TC=100°C  
TC=25°C  
TC=-25°C  
300  
100  
TC=100°C  
25°C  
-25°C  
50  
30  
10  
-2 -5 -10 -20 -50-100-200 -500 -1k -3k  
0
-0.4  
-0.8  
-1.2  
-1.6  
Collector Current, IC (mA)  
Base-Emitter Voltage, VBE (V)  
Active-Region Safe Operating AREA  
(SOA)  
Collector-Emitter Saturation Voltage  
vs. Collector Current  
-1.0  
-10  
Common Emitter  
IC/IB = 10  
100ms  
10ms  
1ms  
-0.4  
-5.0  
DC  
-2.0  
-1.0  
-0.2  
-0.1  
-0.5  
TC=100°C  
25°C  
Bonding Wire Limit  
Second Breakdown Limit  
Thermally Limited  
-0.05  
-25°C  
-0.2  
-0.1  
at TC=25°C(Single Pulse)  
-0.02  
-2.0  
-5.0-7.0-10 -20  
-50-70-100  
-2 -5 -10 -20 -50  
-200  
-100  
-1k -2k -3k  
-1.0  
-500  
Collector Emitter Voltage, VCE (V)  
Collector Current, IC (mA)  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 5  
QW-R204-018.F  
www.unisonic.com.tw  
2SB834  
PNP SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
5 of 5  
QW-R204-018.F  
www.unisonic.com.tw  

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