2SC1384L-S-T9N-K [UTC]
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN;
| 型号： | 2SC1384L-S-T9N-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92NL, 3 PIN 放大器 晶体管 |
| 文件： | 总5页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC1384
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC1384 is power amplifier and driver.
FEATURES
* Low VCE(SAT)
* 2~3W output in complementary pair with 2SA684
Lead-free: 2SC1384L
Halogen-free: 2SC1384G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
2SC1384L-x-AB3-R
2SC1384L-x-T9N-B
2SC1384L-x-T9N-K
2SC1384L-x-T9N-R
Halogen-Free
1
B
E
E
E
2
C
C
C
C
3
E
B
B
B
2SC1384-x-AB3-R
2SC1384-x-T9N-B
2SC1384-x-T9N-K
2SC1384-x-T9N-R
2SC1384G-x-AB3-R
2SC1384G-x-T9N-B
2SC1384G-x-T9N-K
2SC1384G-x-T9N-R
SOT-89
TO-92NL
TO-92NL
TO-92NL
Tape Reel
Tape Box
Bulk
Tape Reel
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Copyright © 2008 Unisonic Technologies Co., Ltd
QW-R211-005.C
2SC1384
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICP
RATINGS
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
1.5
V
Peak Collector Current
Collector Current (DC)
Collector Dissipation (Ta=25℃)
Junction Temperature
Operating Temperature
Storage Temperature
A
IC
1
A
PC
1000
mW
℃
℃
℃
TJ
125
TOPR
TSTG
-20 ~ +85
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0
60
50
5
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
BVEBO IE=10μA, IC=0
V
ICBO
hFE1
hFE2
VCB=20V, IE=0
0.1
μA
VCE=10V, IC=500mA
VCE=5V, IB=1A
85
50
160
100
0.2
340
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=0.5A, IB=50mA
VBE(SAT) IC=0.5A, IB=50mA
0.4
1.2
V
V
0.85
200
11
fT
VCE=10V, IB=50mA
MHz
pF
Cob
VCB=10V, IE=0, f=1MHz
20
CLASSIFICATION OF hFE
RANK
Q
R
S
RANGE
85-170
120-240
170-340
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QW-R211-005.C
2SC1384
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
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2SC1384
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Transition Frequency vs.
Emitter Current
Collector Output Capacitance vs.
Collector to Base Voltage
50
45
40
200
180
160
IE=0
F=1MHz
Ta=25℃
VCB=10V
Ta=25℃
35
30
25
140
120
100
20
15
10
80
60
40
5
0
20
0
1
3
10
30
100
-1
-3
-10
-30
-100
Collector To Base Voltage, VCB (V)
Emitter Current, IE (mA)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
Collector to Emitter Current vs.
Ambient Temperature
104
120
IC=10mA
Ta=25℃
VCE=10V
100
80
103
102
10
1
60
40
20
0
1
3
10 30
0.1 0.3
100
0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta (℃)
Base To Emitter Resistance, RBE (KΩ)
UNISONIC TECHNOLOGIES CO., LTD
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2SC1384
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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