2SC1623 [UTC]
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD; 音频通用放大器NPN硅晶体管MINI模具
| 型号： | 2SC1623 |
| 厂家： | 
Unisonic Technologies |
| 描述： | AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD |
| 文件： | 总2页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC1623
Preliminary
NPN SILICON TRANSISTOR
AUDIO FREQUENCY GENERAL
PURPOSE AMPLIFIER NPN
SILICON TRANSISTOR MINI
MOLD
3
1
2
DESCRIPTION
SOT-23
The UTC 2SC1623 is a NPN silicon transistor using UTC’s
advanced technology to provide customers with high DC current gain
and high breakdown voltage.
The UTC 2SC1623 is usually used in audio frequency general
purpose amplifier.
FEATURES
* High breakdown Voltage
* High DC Current Gain
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
SOT-23
Packing
Halogen Free
2SC1623G-x-AE3-R
1
2
3
2SC1623L-x-AE3-R
E
B
C
Tape Reel
Note: Pin Assignment: E: Emitter B: Base C: Collector
2SC1623L-x-AE3-R
(1) R: Tape Reel
(2) AE3: SOT-23
(1) Packing Type
(2) Package Type
(3)
(3) x: refer to Classification of hFE
(4) G: Halogen Free, L: Lead Free
(4) Lead Free
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 2
QW-R206-100.a
2SC1623
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
60
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Power Dissipation
50
V
5.0
V
100
mA
mW
°C
°C
PD
200
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C)
PARAMETER
SYMBOL
ICBO
TEST CONDITIONS
VCB=60V, IE=0
MIN TYP MAX UNIT
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
0.1
0.1
600
0.3
1.0
μA
μA
IEBO
VEB=5.0V, IC=0
hFE
VCE=6.0V, IC=1.0mA (Note 1)
90
200
0.15
0.86
Collector Saturation Voltage
Base to Saturation Voltage
Base Emitter Voltage
Gain Bandwidth Product
Output Capacitance
VCE(SAT) IC=100mA, IB=10mA (Note 1)
VBE(SAT) IC=100mA, IB= 10mA (Note 1)
V
V
VBE
fT
VCE=6.0V, IC=1.0mA (Note 1)
VCE= 6.0V, IE=-10mA
0.55 0.62 0.65
V
250
3.0
MHz
pF
COB
VCB= 6.0V, IE=0, f=1.0MHz
Note: 1. Pulsed: PW≤350ms, Duty Cycle≤2 %
CLASSIFICATION OF hFE
RANK
L4
L5
L6
L7
RANGE
90 ~ 180
135 ~ 270
200 ~ 400
300 ~ 600
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R206-100.a
www.unisonic.com.tw
相关型号：
2SC1623-L6-TP
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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