2SC2655Y [UTC]

Transistor;
2SC2655Y
型号: 2SC2655Y
厂家: Unisonic Technologies    Unisonic Technologies
描述:

Transistor

文件: 总4页 (文件大小:123K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UTC2SC2655  
NPNEPITAXIAL SILICON TRANSISTOR  
POWER AMPLIFIER APPLICATIONS  
POWER SWITCHING APPLICATIONS  
FEATURES  
*Low saturation voltage  
VCE(sat)= 0.5V (Max.)  
*High speed switching time  
tstg=1.0μs (Typ.)  
1
TO-92NL  
1:EMITTER 2:COLLECTOR 3:BASE  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )  
PARAMETER  
Collector-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
VALUE  
UNIT  
V
V
V
A
A
A
50  
50  
5
2
3
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Current(Pluse)  
Base Current  
Icp*  
IB  
0.5  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
* PW16ms,Duty Cycle50%.  
Pc  
Tj  
TSTG  
900  
150  
-55 ~ +150  
mW  
°C  
°C  
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector Emitter Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
SYMBOL  
V(BR)CEO  
ICBO  
TEST CONDITIONS  
Ic= 10mA IB= 0  
MIN TYP MAX UNIT  
50  
V
μA  
μA  
VCB=50V IE= 0  
1.0  
1.0  
IEBO  
VEB= 5V Ic=0  
DC Current Gain  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=2V,Ic=0.5A  
VCE=2V,Ic=1.5A  
Ic=1A,IB=0.05A  
70  
40  
240  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
Transition Frequency  
0.5  
1.2  
V
V
MHz  
pF  
Ic=1A,IB=0.05A  
VCE=2V, Ic=0.5A  
VCB= 10V, IE= 0, f=1MHz  
100  
30  
Collector Output Capacitance  
Cob  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-013,B  
UTC2SC2655  
NPNEPITAXIAL SILICON TRANSISTOR  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
0.1  
IB1  
OUTPUT  
Turn-on Time  
ton  
20μs  
INPUT  
IB2  
IB1  
μS  
Switching Time  
IB2  
Vcc=30 V  
IB1= -IB2=0.05A  
DUTY CYCLE1%  
CLASSIFICATION OF hFE(1)  
RANK  
O
Y
RANGE  
70-140  
120-240  
ELECTRICAL CHARACTERISTICS CURVES  
VCE-Ic  
Ic-VCE  
1
2.4  
Common Emitter  
25  
20  
Ta=25°C  
12  
10  
8
6
0.8  
2.0  
18  
15  
IB=5mA  
Common  
1.6  
1.2  
0.8  
0.6  
0.4  
20  
Emitter  
10  
Ta=25°C  
30  
40  
4
0.2  
0
IB=2mA  
0.4  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0
2
4
6
14  
8
10  
12  
Collector -Emitter Voltage VcE(V)  
Collector Current Ic (A)  
VCE-Ic  
VCE-Ic  
1
1
IB=5mA  
Common EmitterTa= -55°C  
0.8  
0.8  
0.6  
0.4  
0.6  
0.4  
IB=5mA  
20  
10  
20  
30  
10  
30  
40  
40  
50  
0.2  
0
0.2  
0
Common Emitter  
Ta=100°C  
0
0.4  
0.8  
1.2  
0
0.4  
0.8  
1.2  
1.6  
2.4  
1.6  
2.4  
2.0  
2.0  
Collector Current Ic (A)  
Collector Current Ic (A)  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-013,B  
UTC2SC2655  
NPNEPITAXIAL SILICON TRANSISTOR  
hFE -Ic  
VCE(sat) -Ic  
1000  
500  
1
Common Emitter  
Common Emitter  
VCE=2V  
Ic/IB=20  
0.5  
0.3  
300  
Ta=25°C  
Ta=100°C  
100  
0.1  
0.05  
0.02  
Ta=100°C  
Ta=-55°C  
50  
30  
Ta=25°C  
Ta=-55°C  
0.3  
0.5  
10  
0.3  
1
0.01  
0.03  
0.1  
1
0.01  
0.03 0.05 0.1  
Collector Current Ic (A)  
Collector Current Ic (A)  
VBE(sat) -Ic  
Ic-VBE  
5
3
2.0  
1.5  
Common Emitter  
VCE=2 V  
Common Emitter  
Ic/IB=20  
Ta=-55°C  
Ta=100°C  
Ta=25°C  
1
Ta=-55°C  
1.0  
0.5  
0
0.5  
0.3  
Ta=25°C  
Ta=100°C  
0.1  
0.3  
1
0.01  
0.03 0.05 0.1  
0
0.4  
0.8  
1.2  
1.6  
2.0  
Collector Current Ic (A)  
Base -Emitter Voltage VBE(V)  
Pc-Ta  
Safe Operating Area  
1000  
800  
5
3
Ic MAX.(PULSED)*  
1ms*  
10ms*  
1
100ms*  
600  
0.5  
0.3  
400  
200  
0
1s*  
DC Operation  
Ta=25°C  
0.1  
Single Nonrepetitive Pulse  
Ta=25°C  
0
40  
80  
120  
160  
0.05  
0.03  
200 240  
Curves Must Be Derated Linearly W ith  
Increase In Temperature  
Ambient Temperature Ta (°C)  
VCEO MAX.  
0.01  
0.2  
0.5  
1
3
10 30  
100  
Collector-Emitter Voltage VCE(V)  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-013,B  
UTC2SC2655  
NPNEPITAXIAL SILICON TRANSISTOR  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
4
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R211-013,B  

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