2SC2688L-K-T6C-K [UTC]
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126C, 3 PIN;
| 型号： | 2SC2688L-K-T6C-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126C, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总5页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC2688
NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma
output circuits.
FEATURES
* High Electrostatic-Discharge-Resistance.
ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)
* Low Cre, High fT
Cre ≤3.0 pF (VCB=30V)
fT ≥50MHz (VCE=30V, IE=-10mA)
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
2
C
C
3
B
B
2SC2688L-x-T60-K
2SC2688L-x-T6C-K
2SC2688G-x-T60-K
2SC2688G-x-T6C-K
TO-126
Bulk
Bulk
TO-126C
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R204-023,C
2SC2688
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
300
UNIT
V
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
300
V
5.0
V
200
mA
W
Ta=25℃
TC=25℃
1.25
Total Power Dissipation
PD
10
W
Junction Temperature
Storage Temperature
TJ
150
℃
℃
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS
VCE(SAT) IC=20mA, IB=5.0mA
MIN
TYP
MAX
1.5
UNIT
V
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
fT
VCB=200V, IE=0
100
100
250
nA
VEB=5.0V, IC=0
VCE=10V, IC=10mA (Note 1)
nA
40
50
80
80
Gain Bandwidth Product
Feedback Capacitance
VCE=30V, IE=-10mA
MHz
pF
Cre
VCB=30V, IE=0, f=1.0MHz
3
Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE
Rank
N
M
L
K
Range
40 ~ 80
60 ~ 120
100 ~ 200
160 ~ 250
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-023,C
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2SC2688
NPN SILICON TRANSISTOR
BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR
UNISONIC TECHNOLOGIES CO., LTD
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QW-R204-023,C
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2SC2688
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Ta=25℃)
Collector Current vs. Base to
Emitter Voltage
DC Current Gain vs. Collector
Current
70
60
50
VCE=10V
VCE=10V
200
100
40
30
20
10
50
10
5
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to Emitter Voltage, VBE (V)
0.1 0.51
5 10 50 100 5001000
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
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2SC2688
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Feedback Capacitance
vs.Collector to Base Voltage
IE=0
f=1MHz
10
5
1
1
5
10
50 100
Collector to Base Voltage, VCB (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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相关型号：
2SC2688L-L-T60-K
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3
UTC
2SC2688L-M-T6C-K
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126C, 3 PIN
UTC
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