2SC3647-S-AB3-R [UTC]
Transistor;
| 型号： | 2SC3647-S-AB3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Transistor |
| 文件： | 总5页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD
2SC3647
NPN SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
FEATURES
* High breakdown voltage and large current capacity
* Fast switching time
* Very small size marking it easy to provide high - density,
small-sized hybrid ICs
1
SOT-89
Lead-free:
2SC3647L
Halogen-free: 2SC3647G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-89
Packing
Normal
Lead Free Plating
Halogen Free
1
2
3
2SC3647-x-AB3-R 2SC3647L-x-AB3-R 2SC3647G-x-AB3-R
E
C
B
Tape Reel
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Copyright © 2009 Unisonic Technologies Co., Ltd
QW-R208-039,B
2SC3647
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
NPN SILICON TRANSISTOR
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
120
100
V
6
V
2
3
A
Collector Current (Pulse)
Collector Dissipation
ICP
A
PC
500
mW
°C
°C
Junction Temperature
TJ
150
Storage Temperature
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC = 10μA, IE =0
MIN TYP MAX UNIT
120
100
6
V
V
IC = 1mA, RBE =∞
IE = 10μA, IC=0
V
VCB = 100V, IE =0
100 nA
100 nA
IEBO
VEB = 4V, IC =0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE(SAT)
VBE(SAT)
Cob
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
VCB = 10V, f =1MHz
VCE = 5V, IC = 100mA
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VCE = 10V, IC = 100mA
0.13 0.4
V
V
0.85 1.2
16
pF
DC Current Gain
hFE
100
400
Turn-ON Time
tON
80
ns
ns
Storage Time
tSTG
1000
50
Fall Time
tF
ns
Gain-Bandwidth Product
fT
120
MHz
CLASSIFICATION OF hFE
■
RANK
R
S
T
RANGE
100 ~ 200
140 ~ 280
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-039,B
www.unisonic.com.tw
2SC3647
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R208-039,B
2SC3647
■ TYPICAL CHARACTERICS
NPN SILICON TRANSISTOR
IC - VBE
hFE - IC
2.4
1000
VCE = 5V
VCE = 5V
7
2.0
1.6
1.2
0.8
0.4
0
5
3
2
100
7
5
3
0.01
7
2
3
5 7 0.1
2
3
5 7
1.0
2
3
0.2
0.4
0.6
0.8
1.0
1.2
0
Base to Emitter Voltage, VBE (V)
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-039,B
2SC3647
NPN SILICON TRANSISTOR
■
TYPICAL CHARACTERICS(Cont.)
VBE (sat) - IC
A S O
10
5
3
2
ICP
IC
IC/IB = 10
7
5
1.0
7
5
3
2
3
2
0.1
7
1.0
7
5
3
2
One Pulse - Ta = 25°C
Mounted on ceramic board
(250mm × 0.8mm)
5
0.01
7
3
5
0.1
1.0
7
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7 10
2
3
5 7 100
2
0.01
1.0
Collector Current, IC (A)
Collector to Emitter Voltage, VCE (V)
PC - Ta
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
20
40 60
80 100 120 140 160
0
Ambient Temperature, Ta (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-039,B
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