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2SC3669O(TO-251) [UTC]

Transistor;
2SC3669O(TO-251)
型号： 2SC3669O(TO-251)
厂家： Unisonic Technologies    Unisonic Technologies
描述：

Transistor
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中文：  中文翻译
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UTC2SC3669  
NPNEPITAXIAL SILICON TRANSISTOR  
POWER AMPLIFIER APPLICATIONS  
POWER SWITCHING APPLICATIONS  
FEATURES  
*Low saturation voltage  
VCE(sat)= 0.5V(Max)  
*High speed switching time: tstg=1.0μS(Typ.)  
1
TO-251  
1:BASE 2:COLLECTOR 3: EMITTER  
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
LIMITS  
UNIT  
V
V
V
A
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
80  
5
2
Base Current  
IB  
Pc  
Tj  
Tstg  
1
1
150  
A
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
W
°C  
°C  
-55 ~ +150  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector Emitter Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
SYMBOL  
V(BR)CEO  
ICBO  
TEST CONDITIONS  
Ic= 10mA, IB= 0  
MIN TYP MAX UNIT  
80  
V
μA  
μA  
VCB=80V, IE= 0  
VEB= 5V, Ic=0  
1.0  
1.0  
IEBO  
DC Current Gain  
hFE1  
hFE2  
VCE=2V, Ic=0.5A  
VCE=2V, Ic=1.5A  
70  
40  
240  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
Transition Frequency  
VCE(sat) Ic=1A, IB=0.05A  
VBE(sat) Ic=1A, IB=0.05A  
0.15  
0.9  
100  
30  
0.5  
1.2  
V
V
MHz  
pF  
fT  
VCE=2V, Ic=0.5A  
VCB= 10V, IE= 0, f=1MHz  
Collector Output Capacitance  
Cob  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R213-006,B  
UTC2SC3669  
NPNEPITAXIAL SILICON TRANSISTOR  
PARAMETER  
SYMBOL  
ton  
TEST CONDITIONS  
MIN TYP MAX UNIT  
IB1  
20μs  
OUTPUT  
Turn-on Time  
Storage Time  
0.2  
1.0  
INPUT  
tstg  
IB1  
IB2  
μs  
IB2  
Switching Time  
Vcc=30 V  
Fall Time  
tf  
0.2  
IB1= -IB2=0.05A  
DUTY CYCLE≦1%  
CLASSIFICATION OF hFE1  
RANK  
O
Y
RANGE  
70-140  
120-240  
ELECTRICAL CHARACTERISTICS CURVES  
Ic-VCE  
VCE-Ic  
2.0  
1
0.8  
0.6  
0.4  
15  
10  
20  
Common  
Emitter  
25  
35  
1.6  
1.2  
0.8  
Ta=25℃  
IB=5mA  
30  
10 15 20  
IB=5mA  
40  
50  
0.4  
0
Common Emitter  
0.2  
0
Ta=25℃  
0
2
4
6
8
10  
12  
0.4 0.8 1.2  
Collector Current, Ic (A)  
0
1.6 2.0 2.4  
Collector -Emitter Voltage, VcE (V)  
VCE-Ic  
VCE-Ic  
1
0.8  
0.6  
1
IB=5mA  
10  
0.8  
0.6  
0.4  
0.2  
0
10 15 20 30 40  
IB=5mA  
20  
15  
30  
40 50  
70  
50  
0.4  
0.2  
0
Common  
Emitter  
Ta=100℃  
Common  
Emitter  
Ta=-55℃  
0
0.8  
1.6  
2.0 2.4  
0.4  
1.2  
0
0.4 0.8 1.2 1.6 2.0 2.4  
Collector Current, Ic (A)  
Collector Current, Ic (A)  
2
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R213-006,B  
UTC2SC3669  
NPNEPITAXIAL SILICON TRANSISTOR  
hFE -Ic  
Common Emitter  
VCE(sat) -Ic  
Common Emitter  
500  
300  
0.5  
0.3  
VCE=2V  
Ic/IB=20  
Ta=100℃  
Ta=100℃  
Ta=25℃  
100  
0.1  
Ta=25℃  
Ta=-55℃  
Ta=-55℃  
50  
30  
0.05  
0.03  
10  
0.01  
0.3  
1
2
0.03  
0.01  
0.03  
0.1  
0.05 0.1  
0.3  
0.5  
0.01  
1
Collector Current Ic (A)  
Collector Current Ic (A)  
Ic-VBE  
VBE(sat) -Ic  
2.0  
1.6  
1.2  
3
1
Common Emitter  
Ic/IB=20  
Common Emitter  
VCE=2 V  
Ta=-55℃  
Ta=100℃  
Ta=25℃  
Ta=-55℃  
Ta=25℃  
0.5  
0.3  
Ta=100℃  
0.8  
0.4  
0
0.1  
0.01 0.03 0.05  
0.5  
2
1
0.3  
0.1  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.6  
Base -Emitter Voltage, VBE(V)  
Collector Current, Ic (A)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
3
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R213-006,B  

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