2SC3835 [UTC]
SWITCH NPN TRANSISTOR; 开关NPN晶体管
| 型号： | 2SC3835 |
| 厂家： | 
Unisonic Technologies |
| 描述： | SWITCH NPN TRANSISTOR |
| 文件： | 总4页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SC3835
NPNEPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
APLLICATION
*Humidifier,DC-DC converter,and general purpose.
1
TO-3PN
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IB
RATING
UNIT
V
V
V
A
Collector-Base Voltage
200
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
120
8
3
Collector Current
7
14
70
A
A
W
°C
°C
Ic
Collector Current (PULSE)
Collector Power Dissipation( Tc=25°C )
Junction Temperature
Storage Temperature
Pc
Tj
TSTG
150
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
Ic= 50mA
MIN TYP MAX UNIT
120
V
μA
μA
VCB=200V, IE=0
VEB= 8V, Ic =0
VCE= 4V,Ic= 3A
100
100
220
0.5
IEBO
hFE
70
VCE(sat) Ic=3A ,IB=0.3A
V
V
VBE(sat)
fT
Cob
ton
Ic=3A ,IB=0.3A
1.2
VCE=12V,IE=-0.5mA
VCB= 10V, IE= 0 A,f=1MHz
See specified Test Circuit
30
110
MHz
pF
µs
µs
µs
Output Capacitance
Turn-on Time
0.5
3.0
0.5
Storage Time
Fall Time
tstg
tf
1
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-002,A
UTC2SC3835
NPNEPITAXIAL SILICON TRANSISTOR
CLASSIFICATION of hFE
RANK
A
B
C
RANGE
70-130
120-170
160-220
Typical Switching Characteristics(Common Emitter)
RL
Vcc
(V)
Ic
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
(Ω)
(A)
50
16.7
3
10
-5
0.3
-0.6
+VBB1
IC
VCC
R1
R2
0
IB1
IB2
50μs
IB
IC
0
0
0
D.U.T
0
0.9IC
0.1IC
20μs
-VBB2
RL
0
GND
tON
tstg tf
ELECTRICAL CHARACTERISTICS CURVES
Ic-VCE
VCE(sat)-IB
7
2.6
6
2
1
5
4
3
2
1
0
I
B=10mA
0
0
1
2
3
4
0.5
1
0.005 0.01
0.05 0.1
Base Current, IB (A)
Collector-Emitter Voltage VCE (V)
2
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-002,A
UTC2SC3835
NPNEPITAXIAL SILICON TRANSISTOR
IC-VBE Temperature
fT–IE
30
20
7
6
VCE=12V
5
4
3
2
1
10
0
0
0
0.5
1.0 1.1
-0.5 -1
-0.01
-0.05-0.1
-5
Base-Emittor Voltage, VBE (V)
Emitter Current, IE (A)
HFE-Ic
HFE-Ic Temperature
200
100
50
300
VCE=4V
VCE=4V
Typ
100
50
20
20
1
5 7
0.02
0.1
0.5
0.01
0.05 0.1
Collector Current Ic (A)
0.5
1
5 7
Collector Current Ic (A)
θj-a–t
5
1
0.5
0.4
100
Time, t (ms)
10
1000
2000
1
3
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-002,A
UTC2SC3835
NPNEPITAXIAL SILICON TRANSISTOR
Safe Operating Area (Single Pulse)
Pc–Ta Derating
20
10
5
70
60
50
40
30
1
0.5
20
10
Without Healstink
Natural Cooling
Without Heatsink
0.1
3.5
0
0.05
200
10
50
120
5
0
50
100 125 150
25
75
Collector-Emitter Current, VcE (A)
Ambient Temperature Ta (℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
4
UTC UNISONIC TECHNOLOGIES CO. LTD
QW-R214-002,A
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