2SC3838G-X-AE3-R [UTC]
HIGH-FREQUENCY AMPLIFIER TRANSISTOR; 高频晶体管放大器
| 型号： | 2SC3838G-X-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH-FREQUENCY AMPLIFIER TRANSISTOR |
| 文件： | 总2页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC3838
NPN SILICON TRANSISTOR
HIGH-FREQUENCY AMPLIFIER
TRANSISTOR
3
FEATURES
1
2
*High transition frequency.
*Small rbb’·Cc and high gain.
*Small NF.
SOT-23
3
1
2
SOT-323
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
E
E
2
B
B
3
C
C
2SC3838L-x-AE3-R
2SC3838L-x-AL3-R
2SC3838G-x-AE3-R
2SC3838G-x-AL3-R
SOT-23
Tape Reel
Tape Reel
SOT-323
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 2
QW-R220-018,Ca
2SC3838
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
20
11
3
V
V
Collector current
50
mA
W
Collector power dissipation
Junction Temperature
PD
0.2
TJ
+150
-55 ~ +150
°C
°C
Storage Temperature
TSTG
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVCBO IC=10μA
BVCEO IC=1mA
BVEBO IE=10μA
20
11
3
V
V
V
ICBO
IEBO
VCB=10V
VEB=2V
0.5
0.5
0.5
400
μA
μA
V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
VCE(SAT) IC =10mA, IB= 5mA
hFE
fT
VCE=10V, IC =5mA
56
VCE=10V, IE=10mA, f=500MHz
VCB=10V, IE=0A, f=1MHz
1.4 3.2
GHz
pF
Output capacitance
Cob
0.8 1.5
Collector-base time constant
Noise factor
rbb’·Cc VCB=10V, IC=10mA, f=31.8MHz
NF VCE=6V, IC=2mA, f=500MHz, Rg=50Ω
4
12
ps
3.5
dB
CLASSIFICATION of hFE
RANK
A
B
C
D
RANGE
56 ~ 110
100 ~ 170
120 ~ 270
250 ~ 400
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
2 of 2
QW-R220-018,Ca
www.unisonic.com.tw
相关型号：
2SC3838KT146
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN
ROHM
2SC3838KT146/L
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
ROHM
©2020 ICPDF网 联系我们和版权申明