2SC4027L-R-TN3-R [UTC]
Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, LEAD FREE PACKAGE-3;型号: | 2SC4027L-R-TN3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, LEAD FREE PACKAGE-3 开关 晶体管 |
文件: | 总5页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC4027
NPN SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
1
FEATURES
TO-220
* High voltage and large current capacity.
* Fast switching time.
1
TO-252
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Packing
Package
Halogen Free
1
B
B
2
C
C
3
E
E
2SC4027L-x-TA3-T
2SC4027L-x-TN3-R
2SC4027G-x-TA3-T
2SC4027G-x-TN3-R
TO-220
TO-252
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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2SC4027
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
180
V
V
V
A
A
160
6
1.5
Collector Current (Pulse)
ICP
2.5
TO-220
TO-252
TO-220
TO-252
2
TA=25°C
W
W
1
65
Collector Dissipation
PC
TC=25°C
15
Junction Temperature
Storage Temperature
TJ
150
°C
°C
TSTG
-55 ~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
BVCBO IC=10A, IE=0
180
160
6
V
V
BVCEO IC =1mA, RBE=∞
BVEBO IE=10μA, IC =0
V
VCE(SAT) IC =500mA, IB=50mA
VBE(SAT) IC =500mA, IB=50mA
0.13 0.45
0.85 1.2
1.0
V
V
ICBO
IEBO
hFE1
hFE2
fT
VCB=120V, IE=0
μA
μA
Emitter Cutoff Current
VEB=4V, I IC =0
1.0
VCE=5V, IC =100mA
VCE=5V, IC =10mA
VCE=10V, IC =50mA
VCB=-10V, f=1MHz
See specified Test Circuit
100
80
400
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
120
12
MHz
pF
COB
TON
TSTG
tF
60
μs
Storage Time
1.2
80
μs
Fall Time
μs
CLASSIFICATION OF hFE1
RANK
R
S
T
RANGE
100~200
140~280
200~400
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2SC4027
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
OUTPUT
IB1
RB
IB2
INPUT
PW=20µs
D.C.≤1%
RL
14kΩ
VR
50Ω
+
+
100µF
470µF
100V
10IB1= -10IB2=Ic=0.7A
-5V
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2SC4027
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.
Collector Current vs.
Collector to Emitter Voltage
Collector to Emitter Voltage
1.0
0.8
0.6
1.8
1.6
1.4
1.2
4.5mA
4.0mA
2.5mA
1.0
2.0mA
1.5mA
0.8
0.6
0.4
0.2
0
0.4
0.2
0
1.0mA
1mA
IB=0
0.5mA
IB=0
0
1
2
3
4
5
0
10
20
30
40
50
Collector to Emitter Voltage, VCE (V)
Collector to Emitter Voltage, VCE (V)
Collector Current vs.
Base to Emitter Voltage
DC Current vs. Collector Current
VCE=5V
1.6
1.2
1000
100
VCE=5V
TA=75°C
TA=25°C
TA=-25°C
0.8
0.4
0
10
0.1
1.0
0
0.2 0.4 0.6 0.8
1.0
1.2
0.01
Base to Emitter Voltage, VBE (V)
Collector Current, Ic (A)
Gain Bandwidth Product vs.
Collector Current
VCE=10V
Output Capacitance vs.
Collector to Base Voltage
100
f=1MHz
100
10
10
0.01
10
100
1.0
0.1
1.0
Collector Current, Ic (A)
Collector to Base Voltage, VCB (V)
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2SC4027
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector to Emitter Saturation Voltage
vs. Collector Current
10
Ic/IB=10
Ic/IB=10
1000
100
TA=75°C
TA=25°C
TA=-25°C
1.0
25°C
75°C
TA=-25°C
0.1
1.0
0.1
1.0
0.01
0.01
Collector Current, Ic (A)
Collector Current, Ic (A)
Collector Current vs.
Collector to Emitter Voltage
ICP=2.5A
Collector Dissipation vs.
Ambient Temperature
16
14
12
10
IC=1.5A
1.0
0.1
8
6
4
2
0
No heat sink
One pulse
Tc =25°C
0.01
10
1.0
100
60
Ambient Temperature, TA(°C)
0
20 40
80
120 140 160
100
Collector to Emitter Voltage, VCE(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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