2SC5027L-N-TF3-T [UTC]

HIGH VOLTAGE AND HIGH RELIABILITY; 高电压和高可靠性
2SC5027L-N-TF3-T
型号: 2SC5027L-N-TF3-T
厂家: Unisonic Technologies    Unisonic Technologies
描述:

HIGH VOLTAGE AND HIGH RELIABILITY
高电压和高可靠性

晶体 晶体管 功率双极晶体管 开关 高压 局域网
文件: 总4页 (文件大小:50K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UNISONIC TECHNOLOGIES CO., LTD  
2SC5027  
NPN SILICON TRANSISTOR  
HIGH VOLTAGE AND HIGH  
RELIABILITY  
.
1
FEATURES  
TO-220  
* High Voltage (VCEO = 800V)  
* High Speed Switching  
* Wide SOA  
1
TO-220F  
*Pb-free plating product number: 2SC5027L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Packing  
Package  
Normal  
Lead Free Plating  
1
B
B
2
C
C
3
E
E
2SC5027-x-TA3-T  
2SC5027-x-TF3-T  
2SC5027L-x-TA3-T  
2SC5027L-x-TF3-T  
TO-220  
Tube  
Tube  
TO-220F  
2SC5027L-x-TA3-T  
(1)Packing Type  
(2)Package Type  
(1) T: Tube  
(2) TA3: TO-220, TF3: TO-220F  
(3) x: refer to Classification of h  
(3)Rank  
FE1  
(4)Lead Plating  
(4) L: Lead Free Plating, Blank: Pb/Sn  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R203-027,C  
2SC5027  
NPN SILICON TRANSISTOR  
ABSOLUTE MAXIMUM RATINGS (Tc = 25  
)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATINGS  
UNIT  
V
Collector-Base Voltage  
850  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Peak Collector Current  
Collector Current (Pulse)  
Base Current  
800  
V
7
V
3
10  
A
ICP  
A
IB  
1.5  
A
Power Dissipation  
PC  
50  
W
Junction Temperature  
Storage Temperature  
TJ  
150  
TSTG  
-55 ~ +150  
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
ELECTRICAL CHARACTERISTICS (TC= 25, unless otherwise specified.)  
PARAMETER  
SYMBOL  
BVCBO  
TEST CONDITIONS  
IC=1mA, IE=0  
MIN  
850  
800  
7
TYP MAX UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
V
V
V
BVCEO  
IC=5mA, IB=0  
BVEBO  
IE=1mA, IC=0  
IC=1.5A, IB1= -IB2=0.3A  
L=2mH, Clamped  
VCB=800V, IE=0  
VEB=5V, IC=0  
Collector-Emitter sustaining Voltage  
VCEX(SUS)  
800  
V
Collector Cut-off Current  
Emitter Cut-off Current  
ICBO  
IEBO  
hFE1  
hFE 2  
10  
10  
40  
µA  
µA  
VCE=5V, IC=0.2A  
VCE=5V, IC=1A  
10  
8
DC Current Gain  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
VCE (SAT) IC=1.5A, IB=0.3A  
VBE (SAT) IC=1.5A, IB=0.3A  
2
V
V
1.5  
Cob  
fT  
VCB=10V, f=1MHz, IE=0  
60  
15  
pF  
MHz  
µs  
Current Gain Bandwidth Product  
Turn ON Time  
VCE=10V, IC=0.2A  
VCC=400V  
tON  
tS  
0.5  
3
IC=5IB1= -2.5IB2=2A  
Storage Time  
µs  
RL=200Ω  
Fall Time  
tF  
0.3  
µs  
CLASSIFICATION of hFE1  
RANK  
N
R
O
RANGE  
10 ~ 20  
15 ~ 30  
20 ~ 40  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 4  
QW-R203-027,C  
www.unisonic.com.tw  
2SC5027  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS  
Static Characteristic  
Switching Time  
Collector Current vs. Collector-Emitter Voltage  
Time vs. Collector-Emitter Voltage  
4.0  
10  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1
I
B
=150 mA  
=100 mA  
IB  
0.1  
1.2  
IB=50mA  
0.8  
0.4  
IB=10mA  
Vcc=400V  
5.I 1= - 2.5.IB2=Ic  
B
0.01  
0.0  
0
1
2
3
4
5
6
7
8
9
10  
1
10  
0.1  
Collector-Emitter Voltage, VCE (V)  
Collector-Emitter Voltage, VCE (V)  
Collector Current vs. Base-Emitter Voltage  
Saturation Voltage vs. Collector Current  
4.0  
10  
1
Ic=5I  
B
VCE=5V  
3.5  
3.0  
2.5  
2.0  
VBE(SAT)  
1.5  
1.0  
0.1  
VCE(SAT)  
0.5  
0.0  
0.1  
1
0.01  
1.2  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
10  
0.01  
Base-Emitter Voltage, VBE (V)  
Collector Current, IC (A)  
Safe Operating Area  
Collector Current vs. Collector-Emitter Voltage  
DC Current Gain vs. Collector Current  
1000  
100  
10  
VCE=5V  
ICP(MAX  
)
1
0
0
μ
s
100  
10  
IC(MAX)(Continuous )  
1
0.1  
D
C
1
m
s
1
0
m
s
0.01  
0.1  
1
1E-s  
1
0.01  
5000  
10  
1
10  
100  
1000  
Collector Current, IC (A)  
Collector-Emitter Voltage, VCE (V)  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 4  
QW-R203-027,C  
www.unisonic.com.tw  
2SC5027  
NPN SILICON TRANSISTOR  
TYPICAL CHARACTERISTICS(Cont.)  
Reverse Bias Operating Area  
Collector Current vs. Collector-Emitter Voltage  
Power vs. Temperature Derating Curve  
80  
100  
10  
IB2=-0.3A  
70  
60  
50  
40  
1
30  
20  
0.1  
10  
0
100  
0.01  
150 175  
1000  
5000  
0
25  
50  
75  
100 125  
()  
10  
Collector-Emitter Voltage, VCE (V)  
Temperature, T  
C
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
4 of 4  
QW-R203-027,C  
www.unisonic.com.tw  

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