2SC5027L-N-TF3-T [UTC]
HIGH VOLTAGE AND HIGH RELIABILITY; 高电压和高可靠性型号: | 2SC5027L-N-TF3-T |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE AND HIGH RELIABILITY |
文件: | 总4页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC5027
NPN SILICON TRANSISTOR
HIGH VOLTAGE AND HIGH
RELIABILITY
.
1
ꢀ
FEATURES
TO-220
* High Voltage (VCEO = 800V)
* High Speed Switching
* Wide SOA
1
TO-220F
*Pb-free plating product number: 2SC5027L
ꢀ
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Normal
Lead Free Plating
1
B
B
2
C
C
3
E
E
2SC5027-x-TA3-T
2SC5027-x-TF3-T
2SC5027L-x-TA3-T
2SC5027L-x-TF3-T
TO-220
Tube
Tube
TO-220F
2SC5027L-x-TA3-T
(1)Packing Type
(2)Package Type
(1) T: Tube
(2) TA3: TO-220, TF3: TO-220F
(3) x: refer to Classification of h
(3)Rank
FE1
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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2SC5027
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATINGS (Tc = 25
℃)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
850
Collector-Emitter Voltage
Collector-Emitter Voltage
Peak Collector Current
Collector Current (Pulse)
Base Current
800
V
7
V
3
10
A
ICP
A
IB
1.5
A
Power Dissipation
PC
50
W
℃
℃
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC=1mA, IE=0
MIN
850
800
7
TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
V
V
BVCEO
IC=5mA, IB=0
BVEBO
IE=1mA, IC=0
IC=1.5A, IB1= -IB2=0.3A
L=2mH, Clamped
VCB=800V, IE=0
VEB=5V, IC=0
Collector-Emitter sustaining Voltage
VCEX(SUS)
800
V
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
hFE1
hFE 2
10
10
40
µA
µA
VCE=5V, IC=0.2A
VCE=5V, IC=1A
10
8
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
VCE (SAT) IC=1.5A, IB=0.3A
VBE (SAT) IC=1.5A, IB=0.3A
2
V
V
1.5
Cob
fT
VCB=10V, f=1MHz, IE=0
60
15
pF
MHz
µs
Current Gain Bandwidth Product
Turn ON Time
VCE=10V, IC=0.2A
VCC=400V
tON
tS
0.5
3
IC=5IB1= -2.5IB2=2A
Storage Time
µs
RL=200Ω
Fall Time
tF
0.3
µs
ꢀ
CLASSIFICATION of hFE1
RANK
N
R
O
RANGE
10 ~ 20
15 ~ 30
20 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
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2SC5027
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Static Characteristic
Switching Time
Collector Current vs. Collector-Emitter Voltage
Time vs. Collector-Emitter Voltage
4.0
10
3.6
3.2
2.8
2.4
2.0
1.6
1
I
B
=150 mA
=100 mA
IB
0.1
1.2
IB=50mA
0.8
0.4
IB=10mA
Vcc=400V
5.I 1= - 2.5.IB2=Ic
B
0.01
0.0
0
1
2
3
4
5
6
7
8
9
10
1
10
0.1
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
Collector Current vs. Base-Emitter Voltage
Saturation Voltage vs. Collector Current
4.0
10
1
Ic=5I
B
VCE=5V
3.5
3.0
2.5
2.0
VBE(SAT)
1.5
1.0
0.1
VCE(SAT)
0.5
0.0
0.1
1
0.01
1.2
0.0
0.2
0.4
0.6
0.8
1.0
10
0.01
Base-Emitter Voltage, VBE (V)
Collector Current, IC (A)
Safe Operating Area
Collector Current vs. Collector-Emitter Voltage
DC Current Gain vs. Collector Current
1000
100
10
VCE=5V
ICP(MAX
)
1
0
0
μ
s
100
10
IC(MAX)(Continuous )
1
0.1
D
C
1
m
s
1
0
m
s
0.01
0.1
1
1E-s
1
0.01
5000
10
1
10
100
1000
Collector Current, IC (A)
Collector-Emitter Voltage, VCE (V)
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2SC5027
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS(Cont.)
Reverse Bias Operating Area
Collector Current vs. Collector-Emitter Voltage
Power vs. Temperature Derating Curve
80
100
10
IB2=-0.3A
70
60
50
40
1
30
20
0.1
10
0
100
0.01
150 175
1000
5000
0
25
50
75
100 125
(℃)
10
Collector-Emitter Voltage, VCE (V)
Temperature, T
C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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