2SC5353BG-TF3-T [UTC]
HIGH VOLTAGE NPN TRANSISTOR; 高压NPN晶体管型号: | 2SC5353BG-TF3-T |
厂家: | Unisonic Technologies |
描述: | HIGH VOLTAGE NPN TRANSISTOR |
文件: | 总4页 (文件大小:251K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC5353B
NPN SILICON TRANSISTOR
HIGH VOLTAGE NPN
TRANSISTOR
1
1
TO-126
TO-220
TO-126C
TO-220F
DESCRIPTION
Switching Regulator and High Voltage Switching Applications
High-Speed DC-DC Converter Applications
1
1
FEATURES
* Excellent switching times: tR = 0.7μs(MAX), tF = 0.5μs (MAX)
* High collectors breakdown voltage: VCEO = 750V
1
1
TO-252
TO-251
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
2
C
C
C
C
C
C
3
2SC5353BL-T60-K
2SC5353BL-T6C-K
2SC5353BL-TA3-T
2SC5353BL-TF3-T
2SC5353BL-TM3-T
2SC5353BL-TN3-R
2SC5353BG-T60-K
2SC5353BG-T6C-K
2SC5353BG-TA3-T
2SC5353BG-TF3-T
2SC5353BG-TM3-T
2SC5353BG-TN3-R
TO-126
TO-126C
TO-220
TO-220F
TO-251
TO-252
B
B
B
B
B
B
E
E
E
E
E
E
Bulk
Bulk
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
900
750
V
7
V
DC
3
A
Collector Current
Base Current
Pulse
ICP
5
A
IB
1
20
A
TO-220F/TO-126/TO-126C
TO-220
W
W
W
°C
°C
Power Dissipation
PD
25
TO-251/TO-252
22
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
BVCBO IC=1 mA, IE = 0
BVCEO IC=10 mA, IB = 0
900
750
V
V
VCB=720V, IE= 0
ICBO
IEBO
hFE1
hFE2
100
10
µA
µA
Emitter Cut-off Current
VEB=7V, IC= 0
VCE=5 V, IC=1 mA
VCE=5 V, IC=0.15 A
10
15
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT) IC=1.2 A, IB=0.24 A
VBE(SAT) IC=1.2 A, IB=0.24 A
1.0
1.3
V
V
Rise Time
tR
0.7
µS
Switching Time
Storage Time
tSTG
4.0
0.5
µS
µS
Fall Time
tF
UNISONIC TECHNOLOGIES CO., LTD
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2SC5353B
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain vs. Collector Current
10
1000
100
Common emitter
IC/IB = 3
1
TC=100℃
TC=100℃
25
10
1
-20
25
Common emitter
VCE = 5 V
0.1
-20
0.05
0.001
0.01
0.1
1
10
0.01
0.1
1
10
Collector Current, IC (A)
Collector Current, IC (A)
UNISONIC TECHNOLOGIES CO., LTD
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2SC5353B
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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