2SC945L-R-T92-K [UTC]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3;
| 型号： | 2SC945L-R-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 放大器 晶体管 |
| 文件： | 总4页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SC945
NPN SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
DESCRIPTION
The UTC 2SC945 is an audio frequency amplifier high
frequency OSC NPN transistor.
FEATURES
* Collector-Emitter voltage:
BVCBO=50V
* Collector current up to 150mA
* High hFE linearity
* Complimentary to UTC 2SA733
Lead-free:
Halogen-free: 2SC945G
2SC945L
ORDERING INFORMATION
Order Number
Pin Assignment
Package
Packing
Normal
Lead Free Plating
Halogen Free
1
E
E
2
C
C
3
B
B
2SC945-x-T92-B
2SC945-x-T92-K
2SC945L-x-T92-B 2SC945G-x-T92-B
2SC945L-x-T92-K 2SC945G-x-T92-K
TO-92
TO-92
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1of 4
QW-R201-005.C
2SC945
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PC
RATING
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
Collector Current
50
5
V
V
250
mW
mA
mA
°С
IC
150
Base Current
IB
50
Junction Temperature
Storage Temperature
TJ
125
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0
SYMBOL
TEST CONDITIONS
MIN
60
TYP
MAX
UNIT
V
BVCBO IC=100μA, IE=0
50
V
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
IEBO
hFE
VCB=40V, IE=0
VEB=3V, IC=0
100
100
600
0.3
nA
nA
DC Current Gain
VCE=6V, IC=1mA
90
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(SAT) Ic=100mA, IB=10mA
0.1
190
2.0
V
fT
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
IC=-0.1mA, VCE=6V
RG=10kΩ, f=100Hz
100
MHz
pF
Cob
3.0
6.0
Noise Figure
NF
4.0
dB
CLASSIFICATION OF hFE
RANK
R
Q
P
K
RANGE
90-180
135-270
200-400
300-600
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-005,C
www.unisonic.com.tw
2SC945
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Current Gain-Bandwidth Product
Collector Output Capacitance
103
102
102
101
VCE=6V
f=1MHz
IE=0
101
100
100
10-1
10-1
100
101
102
100
101
102
103
Collector Current, IC (mA)
Collector-Base Voltage (V)
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R201-005,C
www.unisonic.com.tw
2SC945
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R201-005,C
www.unisonic.com.tw
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