2SD1060 [UTC]
NPN EPITAXIAL PLANAR SILICON TRANSISTOR; NPN外延平面硅晶体管
| 型号： | 2SD1060 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTC2SD1060
NPNEPITAXIAL PLANAR TRANSISTOR
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
FEATURE
*Low collector-to-emitter saturation voltage:
VCE(sat)=0.4V max/IC=3A, IB=0.3A
1
APPLICATIONS
*Suitable for relay drivers, high-speed inverter, converters,
and other general large-current switching.
SOT-89
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
V
V
A
60
50
6
5
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
ICP
PC
Tj
TSTG
9
1
150
A
W
°C
°C
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
ICBO
TEST CONDITIONS
MIN. TYP. MAX. UNIT
VCB=40V,IE=0
VEB=4V,IC=0
0.1
0.1
360
mA
mA
IEBO
hFE1
VCE=2V, IC=1A
VCE=2V, IC=3A,
VCE =5V, IC =1A
VCB =10V, f=1MHz
IC =3A, IB =0.3A
IC =1mA, IE =0
IC =1mA, RBE =∞
70
30
hFE2
fT
Cob
Gain bandwidth product
Output Capacitance
30
100
MHZ
pF
V
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown
Voltage
VCE(sat)
V(BR)CBO
V(BR)CEO
0.4
60
50
V
V
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
V(BR)EBO
IC =0, IE =1mA
6
V
tON
tstg
tf
See specified test circuit
See specified test circuit
See specified test circuit
0.1
1.4
0.2
µs
µs
µs
Fall Time
1
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R208-023,B
UTC2SD1060
NPNEPITAXIAL PLANAR TRANSISTOR
CLASSIFICATION of hFE1
RANK
Q
R
S
RANGE
70-140
100-200
180-360
SWITCHING TIME TEST CIRCUIT
2
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R208-023,B
UTC2SD1060
NPNEPITAXIAL PLANAR TRANSISTOR
fT-Ic
10000
VCE= 5V
f=1MHz
3000
1000
Tc=25℃
300
100
30
10
3
1
1
10
3
0.01 0.03 0.1 0.3
Collector current Ic(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
3
UTC UNISONIC TECHNOLOGIES CO., LTD.
QW-R208-023,B
相关型号：
2SD1060-Q-TN3-R
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, TO-252, 3 PIN
UTC
2SD1060-R-TA3-T
Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明