2SD1624L-T-AB3-R [UTC]
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3;型号: | 2SD1624L-T-AB3-R |
厂家: | Unisonic Technologies |
描述: | Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3 开关 晶体管 |
文件: | 总5页 (文件大小:238K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1624
NPN SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SD1624 applies to voltage regulators, relay drivers,
lamp drivers, and electrical equipment.
FEATURES
* Adoption of FBET, MBIT processes
* Low collector-to-emitter saturation voltage
* Fast switching speed.
* Large current capacity and wide ASO
ORDERING INFORMATION
Ordering Number
Pin Assignment
Packing
Package
SOT-89
Lead Free
Halogen Free
2SD1624G-x-AB3-R
1
2
3
2SD1624L-x-AB3-R
B
C
E
Tape Reel
MARKING
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Copyright © 2013 Unisonic Technologies Co., Ltd
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2SD1624
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
PC
RATINGS
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
6
V
Collector Power Dissipation( Tc=25°C)
500
mW
A
DC
IC
3
6
Collector Current
PULSE
ICP
A
Junction Temperature
Storage Temperature
TJ
150
°C
°C
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
TEST CONDITIONS
IC=10μA, IE=0
IC=1mA, RBE=∞
IE=10μA, IC=0
MIN
60
50
6
TYP
MAX
UNIT
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
BVCEO
V
BVEBO
V
VCE(SAT) IC=2A, IB=100mA
0.19
0.94
0.5
1.2
1
V
VBE(SAT)
ICBO
IEBO
hFE
IC=2A, IB=100mA
VCB=40V, IE=0
V
μA
μA
VEB=4V, IC=0
1
VCE=2V, Ic=100mA
VCE=10V, IC=50mA
VCE=10V, f=1MHz
See test circuit
See test circuit
See test circuit
100
560
Gain-Bandwidth Product
Output Capacitance
fT
150
25
MHz
pF
ns
COB
tON
Turn-ON Time
70
Storage Time
tSTG
tF
650
35
ns
Fall Time
ns
CLASSIFICATION OF hFE
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560
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2SD1624
NPN SILICON TRANSISTOR
TEST CIRCUIT
PW=20µS
Duty Cycle≤1%
IB
1
INPUT
RB
OUTPUT
IB2
25Ω
VR
50Ω
25V
+
µF
470
+
100
µF
-5V
Ic=10, IB1= -10, IB2=1A
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2SD1624
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector Current vs.
Base to Emitter Voltage
DC Current Gain vs. Collector Current
VCE=2V
1000
3.0
2.8
2.4
VCE=2V
7
5
3
2
2.0
1.6
1.2
25℃
-25℃
100
7
0.8
0.4
0
5
3
2
2
3
5
7
2
3
5
2 3
70.01
0.1
Collector Current, IC (A)
7 1.0
5
0
0.2
0.4
0.6
0.8
1.0 1.2
Base to Emitter Voltage, VBE (V)
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2SD1624
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Collector Dissipation vs.
Ambient Temperature
ASO.
10
1.8
ICP
5
1.6
1.5
1.4
IC
3
2
1.2
1.0
1.0
0.1
5
0.8
3
2
0.6
0.5
0.4
Mounted on ceramic board
(250mm2×0.8mm)
Ta=25℃one pulse
5
0.2
0
No heat sink
3
2
2
5
2
3
7 1.0
0
20 40 60 80
100 120
Ambient Temperature, Ta (℃)
7 100
140 160
5
7
2
3
5
10
Collector to Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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