2SD1628 [UTC]
HIGH-CURRENT SWITCHING APPLICATIONS; 大电流开关应用
| 型号： | 2SD1628 |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH-CURRENT SWITCHING APPLICATIONS |
| 文件： | 总3页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD1628
Preliminary
NPN SILICON TRANSISTOR
HIGH-CURRENT SWITCHING
APPLICATIONS
FEATURES
* Low saturation voltage.
* High hFE.
* Large current capacity.
1
SOT-89
Lead-free:
2SD1628L
Halogen-free: 2SD1628G
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-89
Packing
Normal
Lead Free Plating
Halogen Free
1
2
3
2SD1628-x-AB3-R 2SD1628L-x-AB3-R 2SD1628G-x-AB3-R
B
C
E
Tape Reel
www.unisonic.com.tw
1of 3
Copyright © 2009 Unisonic Technologies Co.,
QW-R208-045.a
2SD1628
Preliminary
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
20
V
6
V
DC
5
8
A
Collector Current
Pulse
ICP
A
Collector Dissipation
Junction Temperature
Storage Temperature
PC
0.5
W
°C
°C
TJ
150
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
SYMBOL
VCE(SAT)
VBE(SAT)
ICBO
TEST CONDITIONS
IC =3A, IB =60mA
MIN TYP MAX UNIT
500 mV
IC =3A, IB =60mA
VCB =50V, IE =0
1.5
100
100
560
V
nA
nA
IEBO
hFE1
hFE2
Cob
Emitter Cut-Off Current
VEB =5V, IC =0
VCE =2V, IC =0.5A
VCE =2V, IC =3A
VCB =10V, f =1MHz
VCE =10V, IC =50mA
120
95
DC Current Gain
Output Capacitance
Transition Frequency
Turn On Time
Storage Time
45
120
30
pF
MHz
ns
fT
tON
See specified Test circuit
tS
300
40
ns
Fall Time
tF
ns
CLASSIFICATION OF hFE1
■
RANK
E
F
G
RANGE
120 ~ 200
160 ~ 320
280 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R208-045.a
www.unisonic.com.tw
2SD1628
Preliminary
NPN SILICON TRANSISTOR
■ SWITCHING TIME TEST CIRCUIT
IB1
OUTPUT
INPUT
1
IB2
200VR
5
PW=10μS
Duty=2%
50
tR, tF≤7ms
1μ
1μ
-5V
Unit (Resistance:Ω, Capacitance:F )
10V
10IB1= -10IB2=IC=2A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R208-045.a
www.unisonic.com.tw
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